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RF1S25N06 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer RF1S25N06
Beschreibung 25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 8 Seiten
RF1S25N06 Datasheet, Funktion
RFP25N06, RF1S25N06, RF1S25N06SM
Data Sheet
January 2002
25A, 60V, 0.047 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09771.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP25N06
TO-220AB
RFP25N06
RF1S25N06
TO-262AA
F1S25N06
RF1S25N06SM
TO-263AB
F1S25N06
NOTE: When ordering use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, e.g. RF1S25N06SM9A.
Packaging
JEDEC TO- 220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• 25A, 60V
• rDS(ON) = 0.047
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
©2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev. C






RF1S25N06 Datasheet, Funktion
RFP25N06, RF1S25N06, RF1S25N06SM
Test Circuits and Waveforms (Continued)
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 18. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 2V
0
Qg(10)
Qg(TH)
VGS = 10V
VGS = 20V
Ig(REF)
0
FIGURE 19. GATE CHARGE WAVEFORM
©2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev. C

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