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RF1K49224 Schematic ( PDF Datasheet ) - Intersil Corporation

Teilenummer RF1K49224
Beschreibung 3.5A/2.5A/ 30V/ 0.060/0.150 Ohms/ Complementary LittleFET Power MOSFET
Hersteller Intersil Corporation
Logo Intersil Corporation Logo 




Gesamt 14 Seiten
RF1K49224 Datasheet, Funktion
Data Sheet
RF1K49224
August 1999 File Number 4330.1
3.5A/2.5A, 30V, 0.060/0.150 Ohms,
Complementary LittleFET™ Power
MOSFET
The RF1K49224 complementary power MOSFET is
manufactured using an advanced MegaFET process. This
process, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It is designed for use
in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. This device can be operated directly from
intergrated circuits.
Formerly developmental type TA49224.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF1K49224
MS-012AA
RF1K49224
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e. RF1K4922496.
Features
• 3.5A, 30V (N-Channel)
2.5A, 30V (P-Channel)
• rDS(ON) = 0.060(N-Channel)
rDS(ON) = 0.150(P-Channel)
• Temperature Compensating PSPICE® Model
• Thermal Impedance PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
S1(1)
G1(2)
D1(8)
D1(7)
S2(3)
G2(4)
D2(6)
D2(5)
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
5
9-16
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
LittleFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999






RF1K49224 Datasheet, Funktion
RF1K49224
Typical Performance Curves (N-Channel) (Continued)
30
22.5
VDD = BVDSS
VDD = BVDSS
10.0
7.5
RL = 8.57
15
Ig(REF) = 0.75mA
VGS = 10V
5.0
PLATEAU VOLTAGES IN
DESCENDING ORDER:
7.5 VDD = BVDSS
2.5
VDD = 0.75 BVDSS
VDD = 0.50 BVDSS
VDD = 0.25 BVDSS
00
20 -II-g-g----((--AR-----CE----F-T---)-)
t, TIME (ms)
80 I-I-g-g----((--AR-----CE----FT----)-)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms (N-Channel)
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
tAV
VDD
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
VGS
VGS
RGS
RL
VDS
DUT
+
VDD
-
FIGURE 17. SWITCHING TIME TEST CIRCUIT
9-21
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

6 Page









RF1K49224 pdf, datenblatt
RF1K49224
PSPICE Electrical Model (N-Channel)
SUBCKT RF1K49224 2 1 3 ; N-Channel Model rev 12/15/94
CA 12 8 1.75e-9
CB 15 14 1.80e-9
CIN 6 8 1.20e-9
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
DPLCAP 5
10
EBREAK 11 7 17 18 33.29
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 1.233e-9
LSOURCE 3 7 0.452e-9
6
ESG 8
+
GATE
1
EVTO
9 20 + 18
LGATE RGATE
8
6
RIN
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
DBREAK
RDRAIN
16
VTO +
21
MOS1
CIN
8
11
EBREAK
+
17
18
MOS2
RSOURCE 7
DRAIN
LDRAIN 2
DBODY
LSOURCE
3
SOURCE
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 1e-4
RGATE 9 20 1.83
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 13.5e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
S1A
12 13
8
S1B
S2A
14 15
13
S2B
13
CA
+
EGS
6
8
CB
+ 14
EDS
5
8
RBREAK
17 18
RVTO
IT 19
VBAT
+
VBAT 8 19 DC 1
VTO 21 6 0.1
.MODEL DBDMOD D (IS = 2.50e-13 RS = 1.35e-2 TRS1 = 4.31e-5 TRS2 = 2.15e-5 CJO = 9.33e-10 TT = 2.08e-8)
.MODEL DBKMOD D (RS = 1.14 TRS1 = 2.23e-3 TRS2 = -8.91e-6)
.MODEL DPLCAPMOD D (CJO = 7.99e-10 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 2.15 KP = 6.25 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 7.74e-4 TC2 = 1.13e-6)
.MODEL RDSMOD RES (TC1 = 4.5e-3 TC2 = -7.45e-7)
.MODEL RVTOMOD RES (TC1 = -4.16e-3 TC2 = 2.16e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -7.15 VOFF= -5.15)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.15 VOFF= -7.15)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.6 VOFF= 2.4)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.4 VOFF= -2.6)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991.
9-27

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