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PDF RF1K49223 Data sheet ( Hoja de datos )
| Número de pieza | RF1K49223 | |
| Descripción | 2.5A/ 30V/ 0.150 Ohm/ Dual P-Channel LittleFET Power MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
January 2002
RF1K49223
2.5A, 30V, 0.150 Ohm, Dual P-Channel
LittleFET™ Power MOSFET
The RF1K49223 Dual P-Channel power MOSFET is
manufactured using an advanced MegaFET process. This
process, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It is designed for use
in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. This device can be operated directly from
integrated circuits.
Formerly developmental type TA49223.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF1K49223
MS-012AA
RF1K49223
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e. RF1K4922396.
Features
• 2.5A, 30V
• rDS(ON) = 0.150Ω
• Temperature Compensating PSPICE® Model
• Thermal Impedance PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
S1(1)
G1(2)
D1(8)
D1(7)
S2(3)
G2(4)
D2(6)
D2(5)
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
5
©2002 Fairchild Semiconductor Corporation
RF1K49223 Rev. B
1 page  
RF1K49223
Typical Performance Curves (Continued)
1.2
ID = -250µA
1.1
1.0
750
CISS
600
450
COSS
300
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS = CDS + CGD
0.9
0.8
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
-30.0
-22.5
VDD = BVDSS
150
0
0
CRSS
-5 -10 -15 -20
VDS, DRAIN TO SOURCE VOLTAGE (V)
-25
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VDD = BVDSS
-10.0
-7.5
-15.0
-7.5
0
RL = 12Ω
IG(REF) = -0.26mA
VGS = -10V
PLATEAU VOLTAGES IN
DESCENDING ORDER:
VDD = BVDSS
VDD = 0.75 BVDSS
VDD = 0.50 BVDSS
VDD = 0.25 BVDSS
20 -I-G-----(--R----E----F----)
IG(ACT)
t, TIME (µs)
80 -I-G-----(--R----E----F----)
IG(ACT)
-5.0
-2.5
0
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VGS
tP
RG
L
DUT
-
VDD
+
IAS
0.01Ω
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
©2002 Fairchild Semiconductor Corporation
tAV
0
VDD
IAS
tP
BVDSS
VDS
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
RF1K49223 Rev. B
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RF1K49223.PDF ] | |
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