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Teilenummer | RF1K49086 |
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Beschreibung | 3.5A/ 30V/ Avalanche Rated/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET | |
Hersteller | Fairchild Semiconductor | |
Logo | ||
Gesamt 7 Seiten Power MOSFET Data Sheets
SEMICONDUCTOR
RF1K49086
January 1997
3.5A, 30V, Avalanche Rated, Dual N-Channel
LittleFET™ Enhancement Mode Power MOSFET
Features
Description
• 3.5A, 30V
• rDS(ON) = 0.060Ω
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
The RF1K49086 Dual N-Channel power MOSFET is manu-
factured using an advanced MegaFET process. This pro-
cess, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon, result-
ing in outstanding performance. It is designed for use in
applications such as switching regulators, switching convert-
ers, motor drivers, relay drivers, and low voltage bus
switches. This device can be operated directly from inte-
grated circuits.
Formerly developmental type TA49086.
RF1K49086
MS-012AA
RF1K49086
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e. RF1K4908696.
Symbol
D1(8)
D1(7)
S1(1)
G1(2)
D2(6)
D2(5)
S2(3)
G2(4)
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
5
LittleFET™ is a trademark of Harris Corporation
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-57
File Number 3986.4
RF1K49086
The soldering process creates a considerable thermal stress
on any semiconductor component. The melting temperature
of solder is higher than the maximum rated temperature of
the device. The amount of time the device is heated to a high
temperature should be minimized to assure device reliability.
Therefore, the following precautions should always be
observed in order to minimize the thermal stress to which
the devices are subjected.
1. Always preheat the device.
2. The delta temperature between the preheat and soldering
should always be less than 100oC. Failure to preheat the
device can result in excessive thermal stress which can
damage the device.
3. The maximum temperature gradient should be less than 5oC
per second when changing from preheating to soldering.
4. The peak temperature in the soldering process should be
at least 30oC higher than the melting point of the solder
chosen.
5. The maximum soldering temperature and time must not
exceed 260oC for 10 seconds on the leads and case of
the device.
6. After soldering is complete, the device should be allowed
to cool naturally for at least three minutes, as forced cool-
ing will increase the temperature gradient and may result
in latent failure due to mechanical stress.
7. During cooling, mechanical stress or shock should be
avoided.
5-62
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ RF1K49086 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RF1K49086 | 3.5A/ 30V/ Avalanche Rated/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET | Fairchild Semiconductor |
RF1K49086 | 3.5A/ 30V/ 0.06 Ohm/ Dual N-Channel LittleFET Power MOSFET | Intersil Corporation |
RF1K49088 | 3.5A/ 30V/ Avalanche Rated/ Logic Level/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET | Fairchild Semiconductor |
RF1K49088 | 3.5A/ 30V/ 0.06 Ohm/ Logic Level/ Dual N-Channel LittleFET Power MOSFET | Intersil Corporation |
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