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Número de pieza RHRP6120CC
Descripción 6A/ 1200V Hyperfast Dual Diode
Fabricantes Intersil Corporation 
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RHRP6120CC
July 1996
File Number 4091.1
6A, 1200V Hyperfast Dual Diode
The RHRP6120CC is a hyperfast dual diode with soft
recovery characteristics (tRR < 55ns). It has half the
recovery time of ultrafast diodes and is silicon nitride
passivated ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits reducing power loss
in the switching transistors.
Formerly developmental type TA49058.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RHRP6120CC
TO-220AB
RHR6120C
NOTE: When ordering, use the entire part number.
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . +175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Symbol
K
Packaging
A1 A2
JEDEC TO-220AB
ANODE 2
CATHODE
ANODE 1
CATHODE (FLANGE)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

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RHRP6120CC pdf
RHRP6120CC
TO-220AB
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
ØP E
A
Q
H1
D
E1
L1
L
60o
D1
b1
b
12
e
e1
3
45o
c
J1
LEAD 1. ANODE 1
LEAD 2. CATHODE
LEAD 3. ANODE 2
TERM. 4. CATHODE
A1
TERM. 4
INCHES
MILLIMETERS
SYMBOL MIN MAX MIN MAX NOTES
A
0.170
0.180
4.32
4.57
-
A1
0.048
0.052
1.22
1.32
-
b
0.030
0.034
0.77
0.86
3, 4
b1
0.045
0.055
1.15
1.39
2, 3
c
0.014
0.019
0.36
0.48 2, 3, 4
D
0.590
0.610 14.99
15.49
-
D1 - 0.160 - 4.06
E
0.395
0.410 10.04
10.41
-
-
E1
- 0.030 - 0.76
-
e 0.100 TYP
2.54 TYP
5
e1 0.200 BSC
5.08 BSC
H1
0.235
0.255
5.97
6.47
J1
0.100
0.110
2.54
2.79
L
0.530
0.550 13.47
13.97
5
-
6
-
L1
0.130
0.150
3.31
3.81
ØP
0.149
0.153
3.79
3.88
2
-
Q
0.102
0.112
2.60
2.84
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. J of
JEDEC TO-220AB outline dated 3-24-87.
2. Lead dimension and finish uncontrolled in L1.
3. Lead dimension (without solder).
4. Add typically 0.002 inches (0.05mm) for solder coating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bot-
tom of dimension D.
7. Controlling dimension: Inch.
8. Revision 1 dated 1-93.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
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