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RGP02-20E Schematic ( PDF Datasheet ) - General Semiconductor

Teilenummer RGP02-20E
Beschreibung GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
Hersteller General Semiconductor
Logo General Semiconductor Logo 




Gesamt 2 Seiten
RGP02-20E Datasheet, Funktion
RGP02-12E THRU RGP02-20E
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
Reverse Voltage - 1200 to 2000 Volts
Forward Current - 0.5 Ampere
CASE STYLE GP10E
0.107 (2.7)
0.080 (2.0)
DIA.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
0.026 (0.66)
0.023 (0.58)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
*Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306
®
FEATURES
Plastic package has
Underwriters Laboratory
Flammability Classification 94V-0
High temperature metallurgically
bonded construction
Capable of meeting environmental standards of
MIL-S-19500
For use in high frequency rectifier circuits
Fast switching for high efficiency
Glass passivated cavity-free junctions
0.5 Ampere operation at TA=55°C with no thermal
runaway
Typical IR less than 0.2µA
High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: Molded plastic over glass body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.012 ounce, 0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=55°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 0.1A
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=125°C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
VRRM
VRMS
VDC
I(AV)
RGP02
-12E
1200
840
1200
RGP02
-14E
1400
980
1400
RGP02
-16E
1600
1120
1600
0.5
RGP02
-18E
1800
1260
1800
IFSM
VF
IR
trr
CJ
RΘJA
RΘJL
TJ, TSTG
20.0
1.8
5.0
50.0
300.0
5.0
65.0
30.0
-65 to +175
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted
RGP02
-20E
2000
1400
2000
UNITS
Volts
Volts
Volts
Amp
Amps
Volts
µA
ns
pF
°C/W
°C
4/98





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