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RG3G Schematic ( PDF Datasheet ) - General Semiconductor

Teilenummer RG3G
Beschreibung GLASS PASSIVATED FAST SWITCHING RECTIFIER
Hersteller General Semiconductor
Logo General Semiconductor Logo 




Gesamt 2 Seiten
RG3G Datasheet, Funktion
RG3A THRU RG3M
GLASS PASSIVATED FAST SWITCHING RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes
Case Style G3
0.250 (6.3)
0.170 (4.3)
DIA.
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN
0.300 (7.6)
MAX.
1.0 (25.4)
MIN
Dimensions in inches and (millimeters)
*Brazed-lead assembly is covered by Patent No. 3,930,306
FEATURES
High temperature metallurgically bonded
construction
Glass passivated cavity-free junction
Hermetically sealed package
3.0 Ampere operation
at TA=55°C with
no thermal runaway
Typical IR less than 0.1µA
Capable of meeting environmental standards of
MIL-S-19500
Fast switching for high efficiency
High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case:Solid glass body
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.04 ounce, 1.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=55°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum average reverse current
at rated peak reverse voltage
TA=25°C
TA=100°C
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
VRRM
VRMS
VDC
RG3A
50
35
50
I(AV)
RG3B
100
70
100
RG3D
220
140
200
RG3G
400
280
400
RG3J
600
420
600
RG3K
800
560
800
3.0
IFSM
VF
IR(AV)
IR
trr
CJ
RΘJA
TJ, TSTG
100.0
1.3
2.0
100.0
5.0
150 250 400
40.0
22.0
-65 to +175
RG3M
1000
700
1000
500
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
µA
µA
ns
pF
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Ir=0.25A
(2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, with both leads attached to heat sink
4/98





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