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PDF RFV10N50 Data sheet ( Hoja de datos )
| Número de pieza | RFV10N50 | |
| Descripción | 10A/ 500V/ Fast Switching N-Channel Enhancement-Mode Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
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SEMICONDUCTOR
RFV10N50BE
August 1995
10A, 500V, Fast Switching N-Channel
Enhancement-Mode Power MOSFETs
Features
• 10A, 500V
• rDS(ON) = 0.480Ω
• Very Fast Turn-Off Characteristics
• Nanosecond Switching Speeds
• Electrostatic Discharge Protected
• UIS Rating Curve
• SOA is Power Dissipation Limited
• High Input Impedance
Package
JEDEC STYLE 5 LEAD TO-247
Description
The RFV10N50BE is an N-Channel fast switching MOSFET transis-
tor that is designed for switching regulators, inverters and motor driv-
ers. The RFV10N50BE is a monolithic structure incorporating a high
voltage, high current MOSFET, a control MOSFET and ESD protec-
tion diodes. As indicated in the symbol to the right, the turn-on of the
main MOSFET is controlled by Gate 1 (G1). The control MOSFET,
controlled by Gate 2 (G2), is distributed throughout the structure. Gate
2 provides a very low impedance and inductive path to rapidly dis-
charge the gate of the main MOSFET. Gate 2 affords very fast turn-off
(typically less than 25ns) when desired. A separate return connection,
Source Kelvin (SK), is supplied for the gate drive circuit to avoid volt-
age induced transients from the output circuit during switching. The
RFV10N50BE can be operated directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFV10N50BE
TO-247
V10N50BE
NOTE: When ordering use the entire part number.
Terminal Diagram
G1
G2
SK
Formerly developmental type TA9881.
D
S
Absolute Maximum Ratings TC = +25oC
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Control FET Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Electrostatic Discharge Rating, MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Control FET Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IAS
Control FET Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Control FET Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
500
+14, -0.3
+14, -0.3
2
10
25
Refer to UIS Curve
1.5
50
156
1.25
21
0.17
-55 to +150
UNITS
V
V
V
KV
A
A
A
mJ
W
W/oC
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1995
1
File Number 3377.1
1 page  
RFV10N50BE
Test Circuits and Waveforms
VGS1
0V
VGS2
0
G1
G2
RL
D
+
VDD
-
0V
0V
VGS1
RGS1
VGS2
RGS2
S
SK
FIGURE 13. RESISTIVE SWITCHING TEST CIRCUITS
+10V
VGS1
0V
90%
10%
+10V
VGS2
tD(ON)
0V
t(ON)
10%
VDS
90%
50%
<20ns
90%
50%
tR 10%
tD(OFF)
t(OFF)
tF
90%
10%
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
DUT
RG
VDS
L
+
VDD
-
IL
0.01Ω
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VGS
tP
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RFV10N50.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| RFV10N50 | 10A/ 500V/ Fast Switching N-Channel Enhancement-Mode Power MOSFETs | Intersil Corporation |
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