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RFP70N03 Schematic ( PDF Datasheet ) - Intersil Corporation

Teilenummer RFP70N03
Beschreibung 70A/ 30V/ 0.010 Ohm/ N-Channel Power MOSFETs
Hersteller Intersil Corporation
Logo Intersil Corporation Logo 




Gesamt 16 Seiten
RFP70N03 Datasheet, Funktion
Data Sheet
RFP70N03, RF1S70N03SM
July 1999 File Number 3404.4
70A, 30V, 0.010 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49025.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP70N03
TO-220AB
RFP70N03
RF1S70N03SM
TO-263AB
F1S70N03
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, e.g., RF1S70N03SM9A
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• 70A, 30V
• rDS(ON) = 0.010
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999






RFP70N03 Datasheet, Funktion
RFP70N03, RF1S70N03SM
Test Circuits and Waveforms (Continued)
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 17. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 2V
0
Ig(REF)
0
Qg(10)
Qg(TH)
VGS = 10V
VGS = 20V
FIGURE 18. GATE CHARGE WAVEFORM
6

6 Page









RFP70N03 pdf, datenblatt
RFP70N03, RF1S70N03SM
Typical Performance Curves (Continued)
200
VGS = 10V
160
120
VGS = 8V
VGS = 7V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
VGS = 6V
80
VGS = 5V
40
VGS = 4V
0
0 1.5 3.0 4.5 6.0 7.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 70A
1.5
1.0
0.5
0
-80 -40
0
40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
ID = 250µA
1.6
1.2
0.8
0.4
0
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
200
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
160 VDD = 15V
120
80
-55oC
25oC
175oC
40
0
02468
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
10
2.0
VGS = VDS, ID = 250µA
1.6
1.2
0.8
0.4
0
-80 -40
0
40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
7000
6000
5000
4000
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS = CDS + CGD
3000
2000
1000
COSS
CRSS
0
0 5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4

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