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RFP45N06 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer RFP45N06
Beschreibung 45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 6 Seiten
RFP45N06 Datasheet, Funktion
SEMICONDUCTOR
RFG45N06, RFP45N06,
RF1S45N06, RF1S45N06SM
December 1995
45A, 60V, Avalanche Rated N-Channel
Enhancement-Mode Power MOSFETs
Features
• 45A, 60V
• rDS(ON) = 0.028
Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175oC Operating Temperature
Description
The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
N-Channel power MOSFETs are manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switch-
ing regulators, switching converters, motor drivers, relay
drivers and emitter switches for bipolar transistors. These
transistors can be operated directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFG45N06
TO-247
RFG45N06
RFP45N06
TO-220AB
RFP45N06
RF1S45N06
TO-262AA
F1S45N06
RF1S45N06SM
TO-263AB
F1S45N06
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S45N06SM9A.
Formerly developmental type TA49028.
Packages
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
Symbol
D
G
GATE
SOURCE
MA
DRAIN
(FLANGE)
S
Absolute Maximum Ratings TC = +25oC
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Maximum Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IAM
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
RFG45N06, RFP45N06
RF1S45N06, RF1S45N06SM
60
60
±20
45
Refer to Peak Current Curve
Refer to UIS Curve
125
131
0.877
-55 to +175
UNITS
V
V
V
A
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1995
3-33
File Number 3574.2






RFP45N06 Datasheet, Funktion
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
Temperature Compensated PSPICE Model for the
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
.SUBCKT RFP45N06 2 1 3
REV 1/18/93
*NOM TEMP = +25oC
CA 12 8 3.49E-9
CB 15 14 3.8E-9
CIN 6 8 2E-9
DBODY 7 5 DBDMOD
DBREAK 5 11DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 66.5
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1E-9
LGATE 1 9 5.65E-9
LSOURCE 3 7 4.13E-9
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
GATE
9 20
1
LGATE RGATE
5
10
- DPLCAP
RDRAIN
ESG
6
8
+
EVTO
18 -
8
6
RIN
16
VTO
-
21
MOS1
CIN
DBREAK
MOS2
11 +
EBREAK
17
18
-
DRAIN
2
LDRAIN
DBODY
S1A
12
13
8
S2A
14 15
13
8
RSOURCE
7 LSOURCE
3
SOURCE
RBREAK
17 18
S1B
S2B
CA 13 CB
+
EGS
-
6
8
+
EDS
-
14
5
8
RVTO
IT 19
-
VBAT
+
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 3.58E-3
RGATE 9 20 0.681
RIN 6 8 1E9
RSOURCE 8 7 RDSMOD 13.6E-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.92
.MODEL DBDMOD D (IS=8.2E-13 RS=7.86E-3 TRS1=2.26E-3 TRS2=2.90E-6 CJO=2.07E-9 TT=5.72E-8)
.MODEL DBKMOD D (RS=1.93E-1 TRS1=5.13E-4 TRS2=-2.15E-5)
.MODEL DPLCAPMOD D (CJO=1.25E-9 IS=1E-30 N=10)
.MODEL MOSMOD NMOS (VTO=3.862 KP=55.57 IS=1E-30 N=10 TOX=1 L=1U W=1U)
.MODEL RBKMOD RES (TC1=1.12E-3 TC2=-5.18E-7)
.MODEL RDSMOD RES (TC1=4.64E-3 TC2=1.58E-5)
.MODEL RVTOMOD RES (TC1=-4.27E-3 TC2=-6.55E-6)
.MODEL S1AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-6.5 VOFF=-1.7)
.MODEL S1BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-1.7 VOFF=-6.5)
.MODEL S2AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-3.0 VOFF=2)
.MODEL S2BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=2.0 VOFF=-3.0)
.ENDS
NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options; authors, William J. Hepp and C. Frank Wheatley.
3-38

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