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RFP2N10L Schematic ( PDF Datasheet ) - Intersil Corporation

Teilenummer RFP2N10L
Beschreibung 2A/ 80V and 100V/ 1.050 Ohm/ Logic Level/ N-Channel Power MOSFETs
Hersteller Intersil Corporation
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Gesamt 5 Seiten
RFP2N10L Datasheet, Funktion
Data Sheet
RFP2N08L, RFP2N10L
July 1999 File Number 2872.2
2A, 80V and 100V, 1.050 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFP2N08L and RFP2N10L are N-Channel enhancement
mode silicon gate power field effect transistors specifically
designed for use with logic level (5V) driving sources in
applications such as programmable controllers, automotive
switching, and solenoid drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate biases in the 3V to 5V
range, thereby facilitating true on-off power control directly
from logic circuit supply voltages.
Formerly developmental type TA0924.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2N08L
TO-220AB
RFP2N08L
RFP2N10L
TO-220AB
RFP2N10L
NOTE: When ordering, include the entire part number.
Features
• 2A, 80V and 100V
• rDS(ON) = 1.050
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-248
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999





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