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RFP14N06 Schematic ( PDF Datasheet ) - Intersil Corporation

Teilenummer RFP14N06
Beschreibung 14A/ 60V/ 0.100 Ohm/ N-Channel Power MOSFET
Hersteller Intersil Corporation
Logo Intersil Corporation Logo 




Gesamt 8 Seiten
RFP14N06 Datasheet, Funktion
Data Sheet
RFP14N06
July 1999 File Number 4002.3
14A, 60V, 0.100 Ohm, N-Channel Power
MOSFET
This N-Channel power MOSFET is manufactured using the
MegaFET process. This process which uses feature sizes
approaching those of LSI integrated circuits, gives optimum
utilization of silicon, resulting in outstanding performance. It
was designed for use in applications such as switching
regulators, switching convertors, motor drivers, and relay
drivers. This transistor can be operated directly from
integrated circuits.
Formerly developmental type TA09770.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP14N06
TO-220AB
RFP14N06
NOTE: When ordering, use the entire part number.
Features
• 14A, 60V
• rDS(ON) = 0.100
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
4-492
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999






RFP14N06 Datasheet, Funktion
RFP14N06
Test Circuits and Waveforms (Continued)
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 18. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 2V
0
Ig(REF)
0
Qg(10)
Qg(TH)
VGS = 10V
VGS = 20V
FIGURE 19. GATE CHARGE WAVEFORM
4-497

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