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PDF RFP12N10L Data sheet ( Hoja de datos )
| Número de pieza | RFP12N10L | |
| Descripción | N-Channel Logic Level Power MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
RFP12N10L
October 2013
N-Channel Logic Level Power MOSFET
100 V, 12 A, 200 mΩ
These are N-Channel enhancement mode silicon gate
power field effect transistors specifically designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching and
solenoid drivers. This performance is accomplished
through a special gate oxide design which provides full
rated conduction at gate biases in the 3V to 5V range,
thereby facilitating true on-off power control directly from
logic circuit supply voltages.
Formerly developmental type TA09526.
Ordering Information
PART NUMBER
PACKAGE
RFP12N10L
TO-220AB
BRAND
F12N10L
Features
• 12A, 100V
• rDS(ON) = 0.200Ω
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS,
TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Symbol
D
Packaging
G
S
DRAIN
(TAB)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
©2005 Fairchild Semiconductor Corporation
RFP12N10L Rev. C0
1 page  
RFP12N10L
Test Circuits and Waveforms (Continued)
VGS
IG(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 12. GATE CHARGE TEST CIRCUIT
VDD
VGS
VGS = 1V
0
IG(REF)
0
Qg(5)
Qg(TH)
Qg(TOT)
VDS
VGS = 5V
VGS = 10V
FIGURE 13. GATE CHARGE WAVEFORMS
©2005 Fairchild Semiconductor Corporation
RFP12N10L Rev. C0
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RFP12N10L.PDF ] | |
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