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RFM10N50 Schematic ( PDF Datasheet ) - Intersil Corporation

Teilenummer RFM10N50
Beschreibung 10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs
Hersteller Intersil Corporation
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Gesamt 4 Seiten
RFM10N50 Datasheet, Funktion
Semiconductor
September 1998
RFM10N45,
RFM10N50
10A, 450V and 500V, 0.600 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFM10
N45,
RFM10
N50)
/Subject
(10A,
450V
and
500V,
0.600
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA)
/Creator
()
/DOCIN
FO pdf-
mark
Features
• 10A, 450V and 500V
• rDS(ON) = 0.600
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM10N45
TO-204AA
RFM10N45
RFM10N50
TO-204AA
RFM10N50
NOTE: When ordering, include the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA17435.
Symbol
D
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
G
S
GATE (PIN 1)
SOURCE (PIN 2)
[ /Page-
Mode
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 1788.1





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