(PDF) RFL1P08 Datasheet - 1A/ -80V and -100V/ 3.65 Ohm/ P-Channel Power MOSFETs

Número de pieza	RFL1P08
Descripción	1A/ -80V and -100V/ 3.65 Ohm/ P-Channel Power MOSFETs
Fabricantes	Intersil Corporation
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No Preview Available ! Semiconductor July 1998 Features • 1A, -80V and -100V • rDS(ON) = 3.65Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Ordering Information PART NUMBER PACKAGE BRAND RFL1P08 TO-205AF RFL1P08 RFL1P10 TO-205AF RFL1P10 NOTE: When ordering, include the entire part number. RFL1P08, RFL1P10 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs Description These are P-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated cir- cuits. Formerly developmental type TA9400. Symbol D G S Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 6-1 File Number 1535.2 1 page

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PDF RFL1P08 Data sheet ( Hoja de datos )