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RFH10N45 Schematic ( PDF Datasheet ) - Intersil Corporation

Teilenummer RFH10N45
Beschreibung 10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs
Hersteller Intersil Corporation
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Gesamt 4 Seiten
RFH10N45 Datasheet, Funktion
Semiconductor
Data Sheet
RFH10N45, RFH10N50
October 1998 File Number 1629.2
10A, 450V and 500V, 0.600 Ohm,
Features
N-Channel Power MOSFETs
[ /Title These are N-Channel enhancement mode silicon gate
(RFH10 power field effect transistors designed for applications such
N45,
as switching regulators, switching converters, motor drivers,
RFH10N relay drivers, and drivers for high power bipolar switching
50) transistors requiring high speed and low gate drive power.
/Subject These types can be operated directly from integrated circuits.
(10A, Formerly developmental type TA17435.
450V Ordering Information
and
500V,
PART NUMBER
PACKAGE
BRAND
0.600
RFH10N45
TO-218AC
RFH10N45
Ohm,
RFH10N50
TO-218AC
RFH10N50
N-Chan- NOTE: When ordering, include the entire part number.
• 10A, 450V and 500V
• rDS(ON) = 0.600
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
nel
Power Packaging
MOS-
FETs)
JEDEC TO-218AC
/Author
()
/Key-
SOURCE
DRAIN
GATE
words
(Harris
Semi-
conduc-
tor,
N-Chan-
DRAIN
(FLANGE)
nel
Power
MOS-
FETs,
TO-
218AC)
/Creator
()
/DOCIN
FO pdf-
mark
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998





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