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RFG60P05E Schematic ( PDF Datasheet ) - Intersil Corporation

Teilenummer RFG60P05E
Beschreibung 60A/ 50V/ 0.030 Ohm/ ESD Rated/ P-Channel Power MOSFET
Hersteller Intersil Corporation
Logo Intersil Corporation Logo 




Gesamt 7 Seiten
RFG60P05E Datasheet, Funktion
Data Sheet
RFG60P05E
July 1999 File Number 2745.6
60A, 50V, 0.030 Ohm, ESD Rated,
P-Channel Power MOSFET
This is a P-Channel power MOSFET manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. It was
designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. This type can be operated directly from integrated
circuits.
Formerly developmental type TA09835.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG60P05E
TO-247
RFG60P05E
NOTE: When ordering, use the entire part number.
Features
• 60A, 50V
• rDS(ON) = 0.030
• Temperature Compensating PSPICE® Model
• 2kV ESD Rated
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
4-147
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999






RFG60P05E Datasheet, Funktion
RFG60P05E
Test Circuits and Waveforms (Continued)
VGS
Ig(REF)
VDS
RL
DUT
-
VDD
+
FIGURE 18. GATE CHARGE TEST CIRCUIT
Qg(TH)
0
VDS
VGS = -2V
-VGS
VDD
Qg(-10)
VGS = -10V
VGS = -20V
0
IG(REF)
Qg(TOT)
FIGURE 19. GATE CHARGE WAVEFORMS
4-152

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