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RFG50N06 Schematic ( PDF Datasheet ) - Intersil Corporation

Teilenummer RFG50N06
Beschreibung 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs
Hersteller Intersil Corporation
Logo Intersil Corporation Logo 




Gesamt 8 Seiten
RFG50N06 Datasheet, Funktion
RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet
July 1999 File Number 3575.4
50A, 60V, 0.022 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49018.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG50N06
TO-247
RFG50N06
RFP50N06
TO-220AB
RFP50N06
RF1S50N06SM
TO-263AB
F1S50N06
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S50N06SM9A.
Packaging
JEDEC STYLE TO-247
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
Features
• 50A, 60V
• rDS(ON) = 0.022
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-467
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999






RFG50N06 Datasheet, Funktion
RFG50N06, RFP50N06, RF1S50N06SM
Test Circuits and Waveforms (Continued)
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 18. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 2V
0
Ig(REF)
0
Qg(10)
Qg(TH)
VGS = 10V
VGS = 20V
FIGURE 19. GATE CHARGE WAVEFORMS
4-472

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