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RFG45N06 Schematic ( PDF Datasheet ) - Intersil Corporation

Teilenummer RFG45N06
Beschreibung 45A/ 60V/ 0.028 Ohm/ N-Channel Power MOSFETs
Hersteller Intersil Corporation
Logo Intersil Corporation Logo 




Gesamt 8 Seiten
RFG45N06 Datasheet, Funktion
RFG45N06, RFP45N06, RF1S45N06SM
Data Sheet
July 1999 File Number 3574.4
45A, 60V, 0.028 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA49028.
Ordering Information
PART NUMBER
RFG45N06
PACKAGE
TO-247
BRAND
RFG45N06
RFP45N06
TO-220AB
RFP45N06
RF1S45N06SM
TO-263AB
F1S45N06
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S45N06SM9A.
Packaging
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 45A, 60V
• rDS(ON) = 0.028
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
DRAIN
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-455
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999






RFG45N06 Datasheet, Funktion
RFG45N06, RFP45N06, RF1S45N06SM
Test Circuits and Waveforms
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 18. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 2V
0
Qg(10)
Qg(TH)
VGS = 10V
VGS = 20V
Ig(REF)
0
FIGURE 19. GATE CHARGE WAVEFORMS
4-460

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