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PDF RFF70N06 Data sheet ( Hoja de datos )
| Número de pieza | RFF70N06 | |
| Descripción | 25A/ 60V/ 0.025 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
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Data Sheet
RFF70N06
March 1999 File Number 4073.2
25A, 60V, 0.025 Ohm, N-Channel Power
MOSFET
The RFF70N06 N-Channel power MOSFET is manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits gives
optimum utilization of silicon, resulting in outstanding
performance. It was designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Reliability screening is available as either commercial or
TX/TXV equivalent of MIL-S-19500. Contact Intersil
Corporation High-Reliability Marketing group for any desired
deviations from the data sheet.
Formerly developmental type TA49007.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFF70N06
TO-254AA
RFF70N06
NOTE: When ordering, use the entire part number.
Commercial Version: RFG70N06.
Features
• 25A†, 60V
• rDS(ON) = 0.025Ω
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 150oC Operating Temperature
• Reliability Screened
† Current is limited by the package capability.
Symbol
D
G
S
Packaging
JEDEC TO-254AA
PACKAGE TAB
(ISOLATED)
GATE
SOURCE
DRAIN
CAUTION: Berylia Warning per MIL-S-19500.
Refer to package specifications.
4-442
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE™ is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
RFF70N06
Typical Performance Curves Unless Otherwise Specified (Continued)
5000
4000
3000
2000
1000
VGS = 0V, f = 0.1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS
60
VDD = BVDSS
45
VDD = BVDSS
10.0
7.5
30 RL = 1.2Ω
IG(REF) = 1.0mA
VGS = 10V
0.75 BVDSS 0.75 BVDSS
15 0.50 BVDSS 0.50 BVDSS
0.25 BVDSS 0.25 BVDSS
5.0
2.5
0
0 5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
0
IG(REF)
20
IG(ACT)
t, TIME (µs)
IG(REF)
80
IG(ACT)
0
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
L
DUT
+
VDD
-
IAS
0.01Ω
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VDS
VGS
VGS
RGS
RL
DUT
+
VDD
-
FIGURE 16. SWITCHING TIME TEST CIRCUIT
4-446
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RFF70N06.PDF ] | |
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