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RFD16N05L Schematic ( PDF Datasheet ) - Intersil Corporation

Teilenummer RFD16N05L
Beschreibung 16A/ 50V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFETs
Hersteller Intersil Corporation
Logo Intersil Corporation Logo 




Gesamt 6 Seiten
RFD16N05L Datasheet, Funktion
Data Sheet
RFD16N05L, RFD16N05LSM
April 1999 File Number 2269.2
16A, 50V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel logic level power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor relay
drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.
Formerly developmental type TA09871.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD16N05L
TO-251AA
RFD16N05L
RFD16N05LSM
TO-252AA
RFD16N05LSM
NOTE: When ordering, include the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e. RFD16N05LSM9A
Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 16A, 50V
• rDS(ON) = 0.047
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
6-163
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999






RFD16N05L Datasheet, Funktion
RFD16N05L, RFD16N05LSM
Spice Model (RFD16N05L)
.SUBCKT RFD16N05L 2 1 3; rev 04/08/92
*Nominal Temperature = 25oC
.MODEL MOSMOD NMOS (VTO=2.054 KP=24.73 IS=1e-30 N=10 TOX=1 L=1u W=1u)
Vto 21 6 0.448
Rsource 8 7 RDSMOD 0.614E-3
Rdrain 5 16 RDSMOD 27.38E-3
.MODEL RDSMOD RES (TC1=3.66E-3 TC2=1.46E-5)
.MODEL RVTOMOD RES (TC1=-1.81E3 TC2=1.41E-6)
Ebreak 11 7 17 18 70.9
.MODEL RBKMOD RES (TC1=1.01E-3 TC2=5.21E-8)
.MODEL DBKMOD D (RS=8.82E-2 TRS1=-2.01E-3 TRS2=7.32E-10)
.MODEL DBDMOD D (IS=1.34E-13 RS=1.21E-2 TRS1=1.64E-3 TRS2=2.59E-6 +CJO=1.13E-9
Cin 6 8 1.21E-9
Ca 12 8 3.33E-9
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4.25 VOFF=-2.25)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.25 VOFF=-4.25)
.MODEL DPLCAPMOD D (CJO=5.22E-10 IS=1e-30 N=10)
Cb 15 14 3.11E-9
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.65 VOFF=4.35)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.35 VOFF=-0.65)
Rgate 9 20 2.98
Lgate 1 9 1.38E-9
Ldrain 2 5 1.0E-12
Lsource 3 7 1.0E-9
Dbody 7 5 DBDMOD
Dbreak 5 11 DBKMOD
Dplcap 10 5 DPLCAPMOD
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evto 20 6 18 8 1
It 8 17 1
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
Rbreak 17 18 RBKMOD 1
Rin 6 8 1e9
Rvto 18 19 RVTOMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 8 19 DC 1
.ENDS
TT=4.14E-8)
x
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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