Datenblatt-pdf.com


RFD16N02LSM Schematic ( PDF Datasheet ) - Intersil Corporation

Teilenummer RFD16N02LSM
Beschreibung 16A/ 20V/ 0.022 Ohm/ N-Channel/ Logic Level/ Power MOSFET
Hersteller Intersil Corporation
Logo Intersil Corporation Logo 




Gesamt 8 Seiten
RFD16N02LSM Datasheet, Funktion
May 1997
RFD16N02L,
RFD16N02LSM
16A, 20V, 0.022 Ohm, N-Channel,
Logic Level, Power MOSFET
Features
• 16A, 20V
• rDS(ON) = 0.022
Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS,
and TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
Description
The RFD16N02L and RFD16N02LSM are N-Channel power
MOSFETs manufactured using the MegaFET process. This
process, which uses feature sizes approaching those of
LSI circuits, gives optimum utilization of silicon, resulting in
outstanding performance. They were designed for use in
applications such as switching regulators, switching convert-
ers, motor drivers and relay drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate bias in the 3V to 5V
range, thereby facilitating true on-off power control directly
from logic level (5V) integrated circuits.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD16N02L
TO-251AA
16N02L
RFD16N02LSM
TO-252AA
16N02L
NOTE: When ordering, use the entire part number. Add the suffix
9A, to obtain the TO-252AA variant in tape and reel, e.g.
RFD16N02LSM9A.
Formerly developmental type TA49243.
Symbol
D
G
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number 4341






RFD16N02LSM Datasheet, Funktion
RFD16N02L, RFD16N02LSM
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
VGS
RL
+
RG
VDD
-
DUT
FIGURE 18. SWITCHING TIME TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
VGS
IG(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 20. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 1V
0
IG(REF)
0
Qg(5)
Qg(TH)
VGS = 5V
VGS = 10V
FIGURE 21. GATE CHARGE WAVEFORMS
6

6 Page







SeitenGesamt 8 Seiten
PDF Download[ RFD16N02LSM Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
RFD16N02LSM16A/ 20V/ 0.022 Ohm/ N-Channel/ Logic Level/ Power MOSFETIntersil Corporation
Intersil Corporation

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche