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PDF RFD15P06SM Data sheet ( Hoja de datos )

Número de pieza RFD15P06SM
Descripción 15A/ 60V/ 0.150 Ohm/ P-Channel Power MOSFETs
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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RFD15P06, RFD15P06SM, RFP15P06
Data Sheet
July 1999 File Number 3988.3
15A, 60V, 0.150 Ohm, P-Channel Power
MOSFETs
These P-Channel power MOSFETs are manufactured using
the MegaFET process. This process which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09833.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD15P06
TO-251AA
F15P06
RFD15P06SM
TO-252AA
F15P06
RFP15P06
TO-220AB
RFP15P06
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD15P06SM9A.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 15A, 60V
• rDS(ON) = 0.150
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
4-103
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 page




RFD15P06SM pdf
RFD15P06, RFD15P06SM, RFP15P06
Typical Performance Curves Unless Otherwise Specified (Continued)
1400
1200
1000
800
600
400
200
0
0
CISS
COSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGS
CRSS
-5 -10 -15 -20
VDS, DRAIN TO SOURCE VOLTAGE (V)
-25
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
-60
VDD = BVDSS
VDD = BVDSS
-45
RL = 3.33
IG(REF) = 0.65mA
-30 VGS = -10V
0.75 BVDSS 0.75 BVDSS
0.50 BVDSS 0.50 BVDSS
-15 0.25 BVDSS 0.25 BVDSS
-10
-7.5
-5
-2.5
0
IG(REF)
20
IG(ACT)
t, TIME (µs)
IG(REF)
80
IG(ACT)
0
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VGS
tP
RG
VDS
L
DUT
-
VDD
+
IAS
0.01
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
VGS
VGS
RGS
VDS
RL
DUT
-
VDD
+
FIGURE 16. SWITCHING TIME TEST CIRCUIT
tAV
0
VDD
IAS
tP
BVDSS
VDS
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
tON
td(ON)
tr
0
10%
tOFF
td(OFF)
tf
10%
VDS
VGS
0
90%
10%
50%
PULSE WIDTH
90%
50%
90%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
4-107

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