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RFD14N05 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer RFD14N05
Beschreibung 14A/ 50V/ 0.100 Ohm/ N-Channel Power MOSFETs
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 8 Seiten
RFD14N05 Datasheet, Funktion
RFD14N05, RFD14N05SM, RFP14N05
Data Sheet
January 2002
14A, 50V, 0.100 Ohm, N-Channel Power
MOSFETs
These are N-channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09770.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD14N05
RFD1 4N05SM
R F P 14N0 5
TO-251AA
TO-252AA
TO-220AB
D14N05
D14N05
RFP14N05
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05SM9A.
Features
• 14A, 50V
• rDS(ON) = 0.100
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
©2002 Fairchild Semiconductor Corporation
RFD14N05, RFD14N05SM, RFP14N05 Rev. B1






RFD14N05 Datasheet, Funktion
RFD14N05, RFD14N05SM, RFP14N05
Test Circuits and Waveforms (Continued)
VGS
IG(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 18. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VG S
VGS = 2V
0
IG(REF)
0
Qg(10)
Qg(TH)
VGS = 10V
VGS = 20V
FIGURE 19.GATE CHARGE WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RFD14N05, RFD14N05SM, RFP14N05 Rev. B1

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