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RFD12N06RLE Schematic ( PDF Datasheet ) - Intersil Corporation

Teilenummer RFD12N06RLE
Beschreibung 12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
Hersteller Intersil Corporation
Logo Intersil Corporation Logo 




Gesamt 6 Seiten
RFD12N06RLE Datasheet, Funktion
Data Sheet
RFD12N06RLE, RFD12N06RLESM,
RFP12N06RLE
July 1999
File Number 2407.4
[ /Title
(RFD1
2N06R
LE,
RFD12
N06RL
ESM,
RFP12
N06RL
E)
/Sub-
ject
(12A,
60V,
0.135
Ohm,
N-
Chan-
nel,
Logic
Level,
Power
MOS-
FETs)
/Autho
r ()
/Key-
words
(Inter-
sil
Corpo-
ration,
N-
Chan-
nel,
Logic
Level,
Power
MOS-
12A, 60V, 0.135 Ohm, N-Channel, Logic
Level, Power MOSFETs
These N-Channel logic level ESD protected power
MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of
LSI integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor drivers,
relay drivers, and emitter switches for bipolar transistors.
This performance is accomplished through a special gate
oxide design which provides full rated conductance at gate
biases in the 3V to 5V range, thereby facilitating true on-off
power control directly from logic circuit supply voltages.
Formerly developmental type TA09861.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD12N06RLE
TO-251AA
12N6LE
RFD12N06RLESM TO-252AA
12N6LE
RFP12N06RLE
TO-220AB
12N06RLE
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in tape and reel, i.e., RFD12N06RLESM9A.
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• 12A, 60V
• rDS(ON) = 0.135
• Electrostatic Discharge Protected
• UIS Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-12
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999






RFD12N06RLE Datasheet, Funktion
RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
6-17

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