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PDF RF5117PCBA Data sheet ( Hoja de datos )

Número de pieza RF5117PCBA
Descripción 3V/ 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
Fabricantes RF Micro Devices 
Logotipo RF Micro Devices Logotipo



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Typical Applications
• IEEE802.11B WLAN Applications
• IEEE802.11G WLAN Applications
• 2.5GHz ISM Band Applications
RF5117
3V, 1.8GHz TO 2.8GHz
LINEAR POWER AMPLIFIER
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• Spread-Spectrum and MMDS Systems
Product Description
The RF5117 is a linear, medium-power, high-efficiency
amplifier IC designed specifically for battery-powered
WLAN applications such as PC cards, mini PCI, and
compact flash applications. The device is manufactured
on an advanced Gallium Arsenide Heterojunction Bipolar
Transistor (HBT) process, and has been designed for use
as the final RF amplifier in 2.5GHz WLAN and other
spread-spectrum transmitters. The device is provided in a
3mmx3mm, 16-pin, leadless chip carrier with a backside
ground. The RF5117 is designed to maintain linearity
over a wide range of supply voltage and power output.
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
16 15 14 13
RF IN 1
12 RF OUT
BIAS GND1 2
11 RF OUT
PWR SEN 3
10 RF OUT
PWR REF 4
Bias
9 NC
5678
-A-
3.00 SQ.
0.15 C A
2 PLCS
1.50 TYP
2 PLCS
0.15 C B
1.00
0.85
0.80
0.65
0.05 C
0.05
0.01
2 PLCS
0.15 C B
-B-
1.37 TYP
12°
MAX
2 PLCS
0.15 C A
2.75 SQ.
Shaded lead is pin 1.
0.60
0.24
TYP
Dimensions in mm.
0.10 M C A B
0.30
0.18
-C-
0.45
0.00
4 PLCS
11..6355SQ.
0.23
0.13
4 PLCS
0.50
0.55
0.30
SEATING
PLANE
Package Style: QFN, 16-Pin, 3x3
Features
• Single 3.3V Power Supply
• +30dBm Saturated Output Power
• 26dB Small Signal Gain
• High Linearity
• 1800MHz to 2800MHz Frequency Range
• +17dBm PO, 11G, <3% EVM
Ordering Information
RF5117
3V, 1.8GHz to 2.8GHz Linear Power Amplifier
RF5117 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A7 041007
2-573

1 page




RF5117PCBA pdf
RF5117
Power sensing is implemented with the PWR SEN and PWR REF lines. The outputs of these pins are transistor collec-
tors and need to be pulled up to the supply through a resistor. PWR REF provides an output current proportional to the
output stage bias current, and PWR SEN provides an output current proportional to the total (RF and bias) current of the
output stage. The pull-up resistors convert these currents to voltages, and the voltage difference between these two pins
is proportional to the RF current. See the graph, “VREF-VSENSE versus POUT”, for the response of this signal. This differ-
ence signal can be fed to a power control circuit elsewhere in the end product, or it can be processed at the PA with addi-
tional circuitry and used to adjust the VREG voltage(s) to implement automatic level control. Contact RFMD Sales or
Applications Engineering for additional data and guidance in using this feature.
The RF5117 has primarily been characterized with a voltage on VREG1 and VREG2 of 2.7VDC. However, the RF5117 will
operate from a wide range of control voltages. If you prefer to use a control voltage that is significantly different than
2.7VDC, contact RFMD Sales or Applications Engineering for additional data and guidance.
Rev A7 041007
2-577

5 Page










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