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PDF RF3800 Data sheet ( Hoja de datos )

Número de pieza RF3800
Descripción GaAs HBT PRE-DRIVER AMPLIFIER
Fabricantes RF Micro Devices 
Logotipo RF Micro Devices Logotipo



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RF3800
GaAs HBT PRE-DRIVER AMPLIFIER
Typical Applications
• Pre-Driver for 450MHz Basestation Amplifiers • Class AB Operation for Cellular Radio and
• PA Stage for Commercial Wireless Infrastructure Wireless Local Loop
Product Description
The RF3800 is specifically designed for wireless infra-
structure applications in 450MHz. Using a highly reliable
GaAs HBT fabrication process, this high-performance
single-stage amplifier achieves high output power over a
broad frequency range. The RF3800 also provides excel-
lent efficiency and thermal stability through the use of a
thermally-enhanced surface-mount AlN package. Ease of
integration is accomplished through the incorporation of
an optimized evaluation board design provided to achieve
proper 50operation. Various evaluation board bias con-
figurations are available to address a broad range of wire-
less infrastructure applications.
Pin 1
0.200 REF
0.005 A
-A-
0.0025
0.024
0.198
0.180
REF
0.050
TYP
0.020
7 PL
0.236
0.156
0.025
R.008
0.028
TYP
0.050
REF
0.0780
MAX
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
VREF 1
NC 2
RF IN 3
NC 4
Bias
Circuit
PACKAGE BASE
GND
8 VBIAS
7 RF OUT
6 RF OUT
5 NC
Package Style: AlN
Features
• 6W Output Power
• High Linearity
• 45% Power-Added Efficiency
• Thermally-Enhanced Packaging
• Broadband Platform Design Approach
Ordering Information
RF3800
GaAs HBT Pre-Driver Amplifier
RF3800PCBA-416 Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A1 040827
4-623

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