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PDF RF2418 Data sheet ( Hoja de datos )

Número de pieza RF2418
Descripción LOW CURRENT LNA/MIXER
Fabricantes RF Micro Devices 
Logotipo RF Micro Devices Logotipo



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RF2418
8 LOW CURRENT LNA/MIXER
Typical Applications
• UHF Digital and Analog Receivers
• Commercial and Consumer Systems
• Digital Communication Systems
• 433MHz and 915MHz ISM Band Receivers
• Spread-Spectrum Communication Systems • General Purpose Frequency Conversion
Product Description
The RF2418 is a monolithic integrated UHF receiver
front-end. The IC contains all of the required components
to implement the RF functions of the receiver except for
the passive filtering and LO generation. It contains an
LNA (low-noise amplifier), a second RF amplifier, a dual-
gate GaAs FET mixer, and an IF output buffer amplifier
which will drive a 50load. In addition, the IF buffer
amplifier may be disabled and a high impedance output is
provided for easy matching to IF filters with high imped-
ances. The output of the LNA is made available as an
output to permit the insertion of a bandpass filter between
the LNA and the RF/Mixer section. The LNA section may
be disabled by removing the VDD1 connection to the IC.
0.156
0.148
.018
.014
0.347
0.339
0.050
0.010
0.004
0.252
0.236
8° MAX
0° MIN
0.0500
0.0164
0.059
0.057
0.010
0.007
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
LNA IN 1
GND 2
VDD1 3
VDD2 4
IF BYP 5
10pF
IF2 OUT 6
BUFFER
IF1 OUT 7
LNA
RF AMP
MIXER
14 LNA OUT
13 GND
12 GND
11 RF IN
10 GND
9 DEC
8 LO IN
Package Style: SOIC-14
Features
• Single 3V to 6.5V Power Supply
• High Dynamic Range
• Low Current Drain
• High LO Isolation
• LNA Power Down Mode for Large Signals
Ordering Information
RF2418
Low Current LNA/Mixer
RF2418 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
8
Rev A6 010717
8-35

1 page




RF2418 pdf
RF2418
Application Schematic
Buffered Output Configuration
850 MHz
RF IN
10 nH
VDD
100 nF 47 pF
IF OUT
C1
IF Filter, 50R1
1
2
3
4
10pF
5
6
BUFFER
7
LNA
RF AMP
MIXER
14
13
12
15nH
11
10
1 nF
9
4 pF
8
10 nH
Image Filter, 50
LO IN
VDD R2 L1
L1 should parallel resonate, at the IF frequency, with the internal
10pF capacitor plus any extra parasitic layout capacitance.
100 nF 100 nF
R1 and R2 are bias resistors that set the bias current for the buffer
amplifier. The value recommended is 510 W, each. Higher values
will decrease the current consumption but also decrease the output
level at which voltage clipping begins to occur. At lower IF
frequencies, where the internal 10 pF capacitor does not roll off the
conversion gain, L1 may be eliminated.
C1 is a blocking capacitor, in case the IF filter's input is not an open
circuit at DC.
8
Rev A6 010717
8-39

5 Page










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