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Teilenummer | RF2416PCBA |
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Beschreibung | DUAL-BAND 2.7V LOW NOISE AMPLIFIER | |
Hersteller | RF Micro Devices | |
Logo | ||
Gesamt 10 Seiten Preliminary
4
RF2416
DUAL-BAND 2.7V LOW NOISE AMPLIFIER
Typical Applications
• GSM/DCS Dual-Band Handsets
• Cellular/PCS Dual-Band Handsets
• General Purpose Amplification
• Commercial and Consumer Systems
Product Description
The RF2416 is a dual-band low noise amplifier with
bypass switch designed for use as a front-end for
950MHz GSM and DCS1800/PCS1900 applications. It
may also be used for dual-band cellular/PCS application.
The 900MHz LNA is a single-stage amplifier with bypass
switch; the 1800/1900 LNA is a two-stage amplifier with
bypass switch. Both amplifiers have excellent noise figure
and high linearity in both high gain and bypass/low gain
mode. The device is packaged in a 3mmx3mm, 12 pin,
leadless chip carrier.
1.00
0.85
0.80
0.65
0.60
0.24 typ
0.30
2 0.18
3.00
sq.
0.65
0.30
4 PLCS
10..2955sq.
12°
max
0.05
0.01
0.75
0.50
0.50
0.23
0.13
4 PLCS
Dimensions in mm.
NOTES:
1 Shaded Pin is Lead 1.
2 Dimension applies to plated terminal and is measured between 0.02 mm and
0.25 mm from terminal end.
3 Pin 1 identifier must exist on top surface of package by identification mark or
feature on the package body. Exact shape and size is optional.
4 Package Warpage: 0.05 mm max.
5 Die thickness allowable: 0.305 mm max.
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
12 11 10
HB IN 1
9 HB OUT
HB BIAS 2
Logic
Control
8 HB SELECT
LB BIAS 3
7 LB SELECT
456
Package Style: LCC, 12-Pin, 3x3
Features
• Low Noise and High Intercept Point
• Dual-Band Application GSM900 and
DCS1800/PCS1900
• Power Down Control
• Switchable Gain
Ordering Information
RF2416
Dual-Band 2.7V Low Noise Amplifier
RF2416 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4
Rev A2 010810
4-199
RF2416
Preliminary
Application Notes
Bypass Mode Configurations
The RF2416 may be placed into either high gain or bypass mode via the HB SELECT and LB SELECT pins for high
band and low band operation, respectively. The high gain state is selected by asserting the select pin for the appropriate
band to a voltage level of less than 0.8V. For Bypass operation, there are two possible methods for placing the RF2416
into this low gain state. The table below shows the two possible Bypass states for each mode.
RF2416 Bypass Mode Possibilities
Gain Select
(HB Mode)
HB BIAS (V)
4 2.7
2.7
0
2.7
Gain Select
(LB Mode)
LB BIAS (V)
2.7 0
2.7 2.7
VCC1_HB and
VCC2_HB (V)
2.78
2.78
VCC1_LB (V)
2.78
2.78
Current (mA)
1.4
1.9
Current (mA)
0.8
1.5
For both Bypass configurations, the select pin for the appropriate band must be placed at a level greater than or equal to
1.8V. The difference between the Bypass possibilities is determined by the specific application’s ability to change the
voltage of the bias pins independently of VCC. The advantage of the ability to assert the bias pins to 0V when in Bypass
mode is shown by the decreased current draw when in this Bypass configuration.
4-204
Rev A2 010810
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ RF2416PCBA Schematic.PDF ] |
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