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PDF RN2909FE Data sheet ( Hoja de datos )
| Número de pieza | RN2909FE | |
| Descripción | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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RN2907FE~RN2909FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2907FE,RN2908FE,RN2909FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
Unit: mm
· Two devices are incorporated into an Extreme-Super-Mini (6 pin)
package.
· Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
· Complementary to RN1907FE~RN1909FE
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Type No.
RN2907FE
RN2908FE
RN2909FE
R1 (kW)
10
22
47
R2 (kW)
47
47
22
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2907FE~
RN2909FE
RN2907FE
Emitter-base voltage
RN2908FE
RN2909FE
Collector current
Collector power dissipation RN2907FE~
Junction temperature
RN2909FE
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC (Note)
Tj
Tstg
Rating
-50
-50
-6
-7
-15
-100
100
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Note: Total rating
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: g (typ.)
Equivalent Circuit
(top view)
654
Q1 Q2
123
1 2003-01-10
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet RN2909FE.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RN2909FE | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) | Toshiba Semiconductor |
| RN2909FS | (RN2907FS - RN2909FS) Transistor Silicon PNP Epitaxial Type |  Toshiba |
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 Sanken |
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