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Teilenummer | RN2110 |
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Beschreibung | Switching/ Inverter Circuit/ Interface Circuit and Driver Circuit Applications | |
Hersteller | Toshiba Semiconductor | |
Logo | ||
Gesamt 5 Seiten RN2110,RN2111
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2110,RN2111
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1110, RN1111
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
−50
−50
−5
−100
V
JEDEC
V EIAJ
―
―
V TOSHIBA
2−2H1A
mA Weight: 2.4mg
100 mW
150 °C
−55~150
°C
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN2110
RN2111
Symbol
ICBO
IEBO
hFE
VCE (sat)
fT
Cob
R1
Test
Circuit
Test Condition
― VCB = −50V, IE = 0
― VEB = −5V, IC = 0
― VCE = −5V, IC = −1mA
― IC = −5mA, IB = −0.25mA
― VCE = −10V, IC = −5mA
― VCB = −10V, IE = 0, f = 1MHz
― ―
Min
―
―
120
―
―
―
3.29
7
Typ.
―
―
―
−0.1
200
3
4.7
10
Max
−100
−100
400
−0.3
―
6
6.11
13
Unit
nA
nA
―
V
MHz
pF
kΩ
1 2001-06-07
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ RN2110 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RN2110 | Switching/ Inverter Circuit/ Interface Circuit and Driver Circuit Applications | Toshiba Semiconductor |
RN2111 | Switching/ Inverter Circuit/ Interface Circuit and Driver Circuit Applications | Toshiba Semiconductor |
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