(PDF) RN2101 Datasheet - TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Número de pieza	RN2101
Descripción	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Fabricantes	Toshiba Semiconductor
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No Preview Available ! RN2101~RN2106 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101,RN2102,RN2103 RN2104,RN2105,RN2106 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1101~RN1106 Equivalent Circuit and Bias Resister Values Type No. RN2101 RN2102 RN2103 RN2104 RN2105 RN2106 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2101~2106 RN2101~2104 RN2105, 2106 RN2101~2106 Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating −50 −50 −10 −5 −100 100 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 2.4mg Unit V V V mA mW °C °C ― ― 2-2H1A 1 2001-06-07 1 page RN2101~RN2106 5 2001-06-07 5 Page

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PDF RN2101 Data sheet ( Hoja de datos )