Datenblatt-pdf.com


RN1910 Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer RN1910
Beschreibung Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 5 Seiten
RN1910 Datasheet, Funktion
RN1910,RN1911
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1910,RN1911
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in US6 (ultra super mini type 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2910, RN2911
Equivalent Circuit
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
*: Total rating
Symbol
VCBO
VCEO
VEBO
IC
PC*
Jj
Tstg
Rating
50
50
5
100
200
150
55~150
Equivalent Circuit (Top View)
Unit
V
V
V
mA
mW
°C
°C
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
2-2J1A
1 2001-06-07





SeitenGesamt 5 Seiten
PDF Download[ RN1910 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
RN1910Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit ApplicationsToshiba Semiconductor
Toshiba Semiconductor
RN1911Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit ApplicationsToshiba Semiconductor
Toshiba Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche