(PDF) RN1909 Datasheet - TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Número de pieza	RN1909
Descripción	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Fabricantes	Toshiba Semiconductor
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No Preview Available ! RN1907~RN1909 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1907,RN1908,RN1909 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l Including two devices in US6 (ultra super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2907~RN2909 Equivalent Circuit and Bias Resistor Values Type No. R1 (kΩ) RN1907 RN1908 RN1909 10 22 47 R2 (kΩ) 47 47 22 JEDEC EIAJ TOSHIBA Weight: 6.8mg ― ― 2-2J1A Equivalent Circuit (Top View) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range : Total rating RN1907~1909 RN1907 RN1908 RN1909 RN1907~1909 Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 50 6 7 15 100 200 150 −55~150 Unit V V V mA mW °C °C 1 2001-06-07 1 page Type Name RN1907 RN1908 RN1909 Marking RN1907~RN1909 5 2001-06-07 5 Page

Páginas	Total 6 Páginas
PDF Descargar	[ Datasheet RN1909.PDF ]

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PDF RN1909 Data sheet ( Hoja de datos )