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RN1510 Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer RN1510
Beschreibung Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 5 Seiten
RN1510 Datasheet, Funktion
RN1510,RN1511
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1510,RN1511
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in SMV
l (super mini type with 5 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2510~RN2511
Equivalent Circuit
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
JEDEC
EIAJ
TOSHIBA
Weight: 0.014g
2-3L1A
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
VCBO 50 V
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
Collector power dissipation
Junction temperature
IC
PC *
Tj
100 mA
300 mW
150 °C
Storage temperature range
*: Total rating
Tstg
55~150
°C
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Equivalent Circuit
(Top View)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN1510
RN1511
Symbol
ICBO
IEBO
hFE
VCE (sat)
fT
Cob
R1
Test
Circuit
Test Condition
VCB = 50V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 1mA
IC = 5mA, IB = 0.25mA
VCE = 10V, IC = 5mA
VCB = 10V, IE = 0, f = 1MHz
Min Typ. Max
― ― 100
― ― 100
120 700
0.1 0.3
250
3
6
3.29 4.7 6.11
7 10 13
Unit
nA
nA
V
MHz
pF
kW
1 2001-06-13





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