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Teilenummer | RN1241 |
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Beschreibung | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | |
Hersteller | Toshiba Semiconductor | |
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Gesamt 3 Seiten RN1241~RN1244
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1241,RN1242,RN1243,RN1244
For Muting and Switching Applications
Unit: mm
l High emitter-base voltage
: VEBO = 25v (min)
l High reverse hfe
: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4ma)
l Low on resistance
: RON = 1Ω (typ.) (IB = 5mA)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
Rating
50
20
25
300
300
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
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2-4E1A
1 2001-06-07
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ RN1241 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RN1241 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba Semiconductor |
RN1242 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba Semiconductor |
RN1243 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba Semiconductor |
RN1244 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba Semiconductor |
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