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Teilenummer | RN1226 |
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Beschreibung | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | |
Hersteller | Toshiba Semiconductor | |
Logo | ||
Gesamt 8 Seiten RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1221,RN1222,RN1223,RN1224
RN1225,RN1226,RN1227
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l High current type (IC(MAX) = 800mA)
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Low VCE (sat)
l Complementary to RN2221~2227
Equivalent Circuit
Type No. R1 (kΩ)
RN1221
RN1222
RN1223
RN1224
RN1225
RN1226
RN1227
1
2.2
4.7
10
0.47
1
2.2
R2 (kΩ)
1
2.2
4.7
10
10
10
10
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
―
―
2-4E1A
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1221~1227
RN1221~1224
RN1225, 1226
RN1227
RN1221~1227
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
Rating
50
50
10
5
6
800
300
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
1 2001-06-07
RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227
6 2001-06-07
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ RN1226 Schematic.PDF ] |
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RN1221 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba Semiconductor |
RN1222 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba Semiconductor |
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www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |