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PDF RMPA2550 Data sheet ( Hoja de datos )
| Número de pieza | RMPA2550 | |
| Descripción | 2.4-2.5 GHz and 5.15-5.85 GHz Dual Band InGaP HBT Linear Power Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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August 2004
RMPA2550
2.4–2.5 GHz and 5.15–5.85 GHz Dual Band InGaP HBT Linear Power Amplifier
General Description
The RMPA2550 is a dual frequency band power amplifier
designed for high performance WLAN applications in the
2.4-2.5 GHz and the 5.15-5.85 GHz frequency bands. The
single low profile 20 pin 3 x 4 x 0.9 mm package with
internal matching on both input and output to 50Ω
minimizes next level PCB space and allows for simplified
integration. The two on-chip detectors provide power
sensing capability while the logic control provides power
saving shutdown options. The PA’s low power consumption
and excellent linearity are achieved using our InGaP
Heterojunction Bipolar Transistor (HBT) technology.
Features
• Dual band operation in a single package design
• 26 dB modulated gain 2.4 to 2.5 GHz band
• 27 dB modulated gain 5.15 to 5.85 GHz band
• 26 dBm output power @ 1 dB compression both
frequency bands
• 2.0% EVM at 18 dBm modulated Pout, 2.45 GHz
• 2.3% EVM at 18 dBm modulated Pout, 5.45 GHz
• 3.3 V single positive supply operation
• Adjustable bias current operation
• Two power saving shutdown options (bias and logic
control)
• Separate integrated power detectors with 20 dB dynamic
range
• Low profile 20 pin, 3 x 4 x 0.9 mm standard Device
QFN leadless package
• Internally matched to 50 ohms
• Optimized for use in 802.11a/b/g
applications
Electrical Characteristics1,3 802.11g/a OFDM
Modulation (with 176 µs burst time, 100µs idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency
Supply Voltage
Gain
Total Current @ 18dBm POUT
Total Current @ 19dBm POUT
EVM @ 18dBm POUT2
EVM @ 19dBm POUT2
Detector Output @ 19dBm POUT
Detector Threshold4
POUT Spectral Mask Compliance5,7
Minimum
2.4
3.0
24.5
Typical
3.3
26
150
157
2.0
3.0
508
5.0
21.0
Maximum
2.5
3.6
28
182
189
2.5
3.5
600
7.0
Minimum
5.15
3.0
25.5
Typical
3.3
27
228
235
2.5
3.5
780
5.0
21.0
Maximum
5.85
3.6
29
260
267
3.5
4.5
865
7.0
Unit
GHz
V
dB
mA
mA
%
%
mV
dBm
dBm
Electrical Characteristics3,6 802.11b CCK
Modulation (RF not framed) 11Mbps Data Rate, 22.0 MHz Bandwidth
Parameter
Minimum Typical Maximum Unit
Frequency
2.4 2.5 GHz
Supply Voltage
3.0 3.3
3.6
V
Gain
24.5 26 28 dB
Total Current
250 mA
First Sidelobe Power
-40 dBc
Second Sidelobe Power
-55 dBc
Max POUT Spectral Mask Compliance7
24.0 dBm
Notes:
1: VC1 2.4 ,VC2 2.4, VM 2.4, VC1 5.0, VC2 5.0, VC3 5.0, VM13 5.0, VM2 5.0 = 3.3 Volts, T=25°C, PA is constantly biased, 50Ω system. VL adjusted for either 2.4
or 5 GHz operation.
2: Percentage includes system noise floor of EVM=0.8%.
3: Not measured 100% in production.
4: POUT measured at PIN corresponding to power detection threshold.
5: Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
6: VC1 2.4, VC2 2.4, VM 2.4 = 3.3 Volts, T=25°C, POUT =+23 dBm, 50Ω system. Satisfies spectral mask.
7: PIN is adjusted to point where performance approaches spectral mask requirements.
©2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D
1 page  
Performance Data (Continued)
802.11g/a Frequency Dependency (continued)
RMPA2550 Gain Vs. Modulated Pout
2.40 to 2.50 GHz VM, VC=3.3V T=25C
Data Rate 54Mbps OFDM 16.7MHz
30
30
RMPA2550 Gain Vs. Modulated Pout
5.15 to 5.85 GHz VM, VC=3.3V T=25C
Data Rate 54Mbps OFDM 16.7MHz
28 28
26
24
2.40 GHz
2.45 GHz
2.50 GHz
22
20
0
5 10 15 20
Modulated Power Out (dBm)
802.11g/a Temperature Dependency
25
RMPA2550 Total Measured EVM Vs. Modulated Pout
2.45 GHz VM, VC=3.3V T=-40, +25, +85C
Data Rate 54Mbps OFDM 16.7MHz
10
26
24
22
20
0
5.15 GHz
5.25 GHz
5.35 GHz
5.45 GHz
5.55 GHz
5.65 GHz
5.75 GHz
5.85 GHz
5 10 15 20
Modulated Power Out (dBm)
25
RMPA2550 Total Measured EVM Vs. Modulated Pout
5.45 GHz VM, VC=3.3V T=-40, +25, +85C
Data Rate 54Mbps OFDM 16.7MHz
10
8
T=-40C
6 T=+25C
T=+85C
4
Includes 0.8% System Level EVM
2
8
T=-40C
6 T=+25C
T=+85C
4
Includes 0.8% System Level EVM
2
0
0 5 10 15 20 25
Modulated Power Out (dBm)
RMPA2550 Detector Voltage Vs. Modulated Pout
2.45 GHz VM, VC=3.3V T=-40, +25, +85C
1000
Data Rate 54Mbps OFDM 16.7MHz
0
0
2000
5 10 15 20
Modulated Power Out (dBm)
25
RMPA2550 Detector Voltage Vs. Modulated Pout
5.45 GHz VM, VC=3.3V T=-40, +25, +85C
Data Rate 54Mbps OFDM 16.7MHz
800
600
T=-40C
T=+25C
400 T=+85C
200
1600
1200
800
400
T=-40C
T=+25C
T=+85C
0
0 5 10 15 20 25
Modulated Power Out (dBm)
0
0 5 10 15 20 25
Modulated Power Out (dBm)
©2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D
5 Page 
Evaluation Board Schematic
Evaluation Board Bill of Materials
©2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet RMPA2550.PDF ] | |
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