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RMPA2265 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer RMPA2265
Beschreibung Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 11 Seiten
RMPA2265 Datasheet, Funktion
December 2004
RMPA2265
Dual Band WCDMA Power Amplifier Module
1850 to 1910 MHz and 1920 to 1980 MHz
General Description
The RMPA2265 power amplifier module (PAM) is designed
for WCDMA applications in both the 1850–1910 and 1920–
1980 MHz bands. The 2 stage PAM is internally matched to
50to minimize the use of external components and
features a low-power mode to reduce standby current and
DC power consumption during peak phone usage. High
power-added efficiency and excellent linearity are achieved
using Fairchild’s InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) process.
Features
• Single positive-supply operation and low power and
shutdown modes
• 42% WCDMA efficiency at +28 dBm average output
power 1920–1980 MHz
• 39% WCDMA efficiency at 27.5 dBm average output
power 1850–1910 MHz
• Meets UMTS/WCDMA performance requirements in
both UMTS bands
• Compact, low-profile package–(3.0 x 3.0 x 1.0 mm
nominal)
• Internally matched to 50and DC blocked RF input/
output
Device (3 x 3 x 1mm)
PYW22W65
Functional Block Diagram
PA MODULE
Vcc1 1
(Top View)
MMIC
RF IN 2
Input
Match
Vmode 3
DC Bias Control
Vref 4
8 Vcc2
Output
Match
7 RF OUT
6 GND
5 GND
(paddle ground on package bottom)
©2004 Fairchild Semiconductor Corporation
RMPA2265 Rev. E






RMPA2265 Datasheet, Funktion
Performance Data: 1850 to 1910 MHz
RMPA2265 3x3 WCDMA PA at US-PCS Freq
Vcc=3.4V, Vref=2.85V, Vmode=0V, Pout=27.5dBm
33.0
32.0
31.0
30.0
29.0
28.0
27.0
26.0
25.0
24.0
23.0
1850
1880
1910
Frequency (MHz)
RMPA2265 3x3 WCDMA PA at US-PCS Freq
Vcc=3.4V, Vref=2.85V, Vmode=0V, Pout=27.5dBm
45.0
44.0
43.0
42.0
41.0
40.0
39.0
38.0
37.0
36.0
35.0
1850
1880
1910
Frequency (MHz)
RMPA2265 3x3 WCDMA PA at US-PCS Freq
Vcc=3.4V, Vref=2.85V, Vmode=0V, Pout=27.5dBm
-30.0
-32.0
-34.0
-36.0
-38.0
-40.0
-42.0
-44.0
-46.0
-48.0
-50.0
1850
1880
1910
Frequency (MHz)
RMPA2265 3x3 WCDMA PA at US-PCS Freq
Vcc=3.4V, Vref=2.85V, Vmode=0V, Pout=27.5dBm
-45.0
-47.0
-49.0
-51.0
-53.0
-55.0
-57.0
-59.0
-61.0
-63.0
-65.0
1850
1880
1910
Frequency (MHz)
Efficiency Improvement Applications
In addition to high-power/low-power bias modes, the
efficiency of the PA module can be significantly increased
at backed-off RF power levels by dynamically varying the
supply voltage (Vcc) applied to the amplifier. Since mobile
handsets and power amplifiers frequently operate at 10–20
dB back-off, or more, from maximum rated linear power,
battery life is highly dependent on the DC power consumed
at antenna power levels in the range of 0 to +16dBm. The
reduced demand on transmitted RF power allows the PA
supply voltage to be reduced for improved efficiency, while
still meeting linearity requirements for WCDMA modulation
with excellent margin. High-efficiency DC-DC converters
are now available to implement switched-voltage operation.
With the PA module in low-power mode (Vmode = 2.0V) at
+16dBm output power and supply voltages reduced from
3.4V nominal down to 1.2V, power-added efficiency is more
than doubled from 9 percent to 25 percent (Vcc = 1.2V)
while maintaining a typical ACLR1 of -40dBc and ACLR2 of
less than -54 dBc. Operation at even lower levels of Vcc
supply voltage are possible with a further restriction on the
maximum RF output power.
©2004 Fairchild Semiconductor Corporation
RMPA2265 Rev. E

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