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PDF IRF740S Data sheet ( Hoja de datos )
| Número de pieza | IRF740S | |
| Descripción | N - CHANNEL 400V - 0.48 ohm - 10 A - D2PAK PowerMESH] MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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® IRF740S
N - CHANNEL 400V - 0.48 Ω - 10 A - D2PAK
PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
IRF740S
400 V < 0.55 Ω 10 A
s TYPICAL RDS(on) = 0.48 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
3
1
D2PAK
TO-263
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS Gat e-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM ( •)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
400
400
± 20
10
6.3
40
125
1.0
4.0
-65 to 150
150
(1) ISD ≤10 A, di/dt ≤120 Α/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
oC
oC
August 1998
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
IRF740S
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF740S.PDF ] | |
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