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Número de pieza | KSP94 | |
Descripción | High Voltage Transistor | |
Fabricantes | Fairchild Semiconductor | |
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No Preview Available ! KSP94
High Voltage Transistor
• High Collector-Emitter Voltage: VCEO= -400V
• Low Collector-Emitter Saturation Voltage
• Complement to KSP44
1 TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-400
-400
-6
-300
625
150
-55~150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCES
BVEBO
ICBO
ICES
IEBO
hFE1
hFE2
hFE3
hFE4
VCE (sat)1
VCE (sat)2
VBE (sat)
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
IC= -100µA, IE=0
IC= -100µA, VBE=0
IE= -10µA, IC=0
VCB= -300V, VE=0
VCE= -400V, VBE=0V
VBE= -4V, IC=0
VCE= -10V, IC= -1mA
VCE= -10V, IC= -10mA
VCE= -10V, IC= -50mA
VCE= -10V, IC= -100mA
IC= -10mA, IB= -1mA
IC= -50mA, IB= -5mA
IC= -10mA, IB= -1mA
VCB= -20V, IE=0, f=1MHz
Min.
-400
-400
-6
40
50
45
40
Typ.
7
Max.
-100
-1
-100
Units
V
V
V
nA
µA
nA
300
-500
-750
-750
mV
mV
mV
pF
©2002 Fairchild Semiconductor Corporation
Rev. A2, July 2002
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Rev. I
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet KSP94.PDF ] |
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