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PDF DSF11060SG Data sheet ( Hoja de datos )

Número de pieza DSF11060SG
Descripción Fast Recovery Diode
Fabricantes Dynex Semiconductor 
Logotipo Dynex Semiconductor Logotipo



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No Preview Available ! DSF11060SG Hoja de datos, Descripción, Manual

Replaces March 1998 version, DS4217-2.4
APPLICATIONS
s Snubber Diode For GTO Circuits
DSF11060SG
DSF11060SG
Fast Recovery Diode
DS4548 - 3.2 January 2000
KEY PARAMETERS
VRRM
IF(AV)
IFSM
Qr
trr
6000V
400A
4200A
700µC
6.0µs
FEATURES
s Double Side Cooling
s High Surge Capability
s Low Recovery Charge
VOLTAGE RATINGS
Type Number
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
Repetitive Peak
Reverse Voltage
V
RRM
V
6000
5800
5600
5500
Conditions
V = V + 100V
RSM
RRM
Lower voltage grades available.
CURRENT RATINGS
Symbol
Parameter
Double Side Cooled
IF(AV)
I
F(RMS)
Mean forward current
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Outline type code: M779b.
See Package Details for further information.
Conditions
Max. Units
Half wave resistive load, Tcase = 65oC
Tcase = 65oC
T = 65oC
case
Half wave resistive load, T = 65oC
case
Tcase = 65oC
T = 65oC
case
400 A
631 A
585 A
265 A
420 A
365 A
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1 page




DSF11060SG pdf
DSF11060SG
PACKAGE DETAILS
(Alternative outline G includes gate connections, all other details are the same as M779b).
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6x2.0 deep (in both electrodes)
Cathode
Ø58.5 max
Ø34 nom
Ø34 nom
Anode
Nominal weight: 310g
Clamping force: 12kN ±10%
Package outine type code: M779b
ASSOCIATED PUBLICATIONS
Title
Calculating the junction temperature or power semiconductors
Recommendations for clamping power semiconductors
Thyristor and diode measurement with a multi-meter
Use of V , r on-state characteristic
TO T
Application Note
Number
AN4506
AN4839
AN4853
AN5001
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