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Número de pieza | DSEP15-06B | |
Descripción | HiPerFREDTM Epitaxial Diode with soft recovery | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DSEP15-06B (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! DSEP 15-06B
HiPerFREDTM Epitaxial Diode
with soft recovery
Preliminary data
IFAV = 15 A
VRRM = 600 V
trr = 25 ns
V
RSM
V
600
V
RRM
V
600
Type
DSEP 15-06B
TO-220 AC
AC
C
A C (TAB)
A = Anode, C = Cathode, TAB = Cathode
D4
Symbol
IFRMS
IFAVM
IFSM
EAS
IAR
TVJ
TVJM
Tstg
Ptot
Md
Weight
Conditions
TC = 130°C; rectangular, d = 0.5
TVJ = 45°C; tp = 10 ms (50 Hz), sine
TVJ = 25°C; non-repetitive; IAS = 1 A;
L = 100 µH
L = 20 mH
VA = 1.5·VR typ.; f = 10 kHz; repetitive
TC = 25°C
mounting torque
typical
Maximum Ratings
35 A
15 A
110 A
0.1
20
0.1
-55...+175
175
-55...+150
95
0.4...0.6
2
mJ
mJ
A
°C
°C
°C
W
Nm
g
Symbol
IR x
VF y
RthJC
RthCH
trr
IRM
Conditions
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
IF = 15 A; TVJ = 150°C
TVJ = 25°C
IF = 1 A; -di/dt = 100 A/µs;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs
TVJ = 100°C
Characteristic Values
typ. max.
100 µA
0.5 mA
1.55 V
2.52 V
1.6 K/W
0.5 K/W
25 30 ns
2.6 A
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 %
y Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
Features
G International standard package
G Planar passivated chips
G Very short recovery time
G Extremely low switching losses
G Low IRM-values
G Soft recovery behaviour
G Epoxy meets UL 94V-0
Applications
G Antiparallel diode for high frequency
switching devices
G Antisaturation diode
G Snubber diode
G Free wheeling diode in converters
and motor control circuits
G Rectifiers in switch mode power
supplies (SMPS)
G Inductive heating
G Uninterruptible power supplies (UPS)
G Ultrasonic cleaners and welders
Advantages
G Avalanche voltage rated for reliable
operation
G Soft reverse recovery for low
EMI/RFI
G Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see pages D4 - 85-86
1-1
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet DSEP15-06B.PDF ] |
Número de pieza | Descripción | Fabricantes |
DSEP15-06A | High Performance Fast Recovery Diode | IXYS |
DSEP15-06AS | High Performance Fast Recovery Diode | IXYS |
DSEP15-06B | HiPerFREDTM Epitaxial Diode with soft recovery | IXYS Corporation |
DSEP15-06BS | High Performance Fast Recovery Diode | IXYS |
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