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EL5210C Schematic ( PDF Datasheet ) - Elantec Semiconductor

Teilenummer EL5210C
Beschreibung 30MHz Rail-to-Rail Input-Output Op Amps
Hersteller Elantec Semiconductor
Logo Elantec Semiconductor Logo 




Gesamt 14 Seiten
EL5210C Datasheet, Funktion
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Features
30MHz -3dB bandwidth
Supply voltage = 4.5V to 16.5V
Low supply current (per amplifier)
= 2.5mA
High slew rate = 33V/µs
Unity-gain stable
Beyond the rails input capability
Rail-to-rail output swing
Available in both standard and
space-saving fine pitch packages
Applications
Driver for A-to-D Converters
Data Acquisition
Video Processing
Audio Processing
Active Filters
Test Equipment
Battery Powered Applications
Portable Equipment
Ordering Information
Part No.
EL5210CS
EL5210CS-T13
EL5210CY
EL5210CY-T7
EL5210CY-T13
EL5410CS
EL5410CS-T13
EL5410CR
EL5410CR-T13
Package
8-Pin SOIC
8-Pin SOIC
8-Pin MSOP
8-Pin MSOP
8-Pin MSOP
14-Pin SOIC
14-Pin SOIC
14-Pin TSSOP
14-Pin TSSOP
Tape & Reel
-
13
-
7
13
-
13
-
13
Outline #
MDP0027
MDP0027
MDP0043
MDP0043
MDP0043
MDP0027
MDP0027
MDP0044
MDP0044
General Description
The EL5210C and EL5410C are low power, high voltage rail-to-rail
input-output amplifiers. The EL5210C contains two amplifiers in one
package and the EL5410C contains four amplifiers. Operating on sup-
plies ranging from 5V to 15V, while consuming only 2.5mA per
amplifier, the EL5410C and EL5210C have a bandwidth of 30MHz --
(-3dB). They also provide common mode input ability beyond the sup-
ply rails, as well as rail-to-rail output capability. This enables these
amplifiers to offer maximum dynamic range at any supply voltage.
The EL5410C and EL5210C also feature fast slewing and settling
times, as well as a high output drive capability of 30mA (sink and
source). These features make these amplifiers ideal for high speed fil-
tering and signal conditioning application. Other applications include
battery power, portable devices, and anywhere low power consump-
tion is important.
The EL5410C is available in a space-saving 14-Pin TSSOP package,
as well as the industry-standard 14-Pin SOIC. The EL5210C is avail-
able in the 8-Pin MSOP and 8-Pin SOIC packages. Both feature a
standard operational amplifier pin out. These amplifiers operate over a
temperature range of -40°C to +85°C.
Connection Diagram
VOUTA 1
VINA- 2
VINA+ 3
-
+
14 VOUTD
13 VIND-
-
+ 12 VIND+
VS+ 4
11 VS-
VINB+ 5
VINB- 6
+
-
10 VINC+
+
- 9 VINC-
VOUTB 7
8 VOUTC
EL5410C (TSSOP-14, SOIC-14)
VOUTA 1
8 VS+
VINA- 2
VINA+ 3
-
+
VS- 4
7 VOUTB
- 6 VINB-
+
5 VINB+
EL5210C (MSOP-8, SOIC-8)
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
© 2000 Elantec Semiconductor, Inc.






EL5210C Datasheet, Funktion
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Typical Performance Curves
Open-Loop Gain vs Temperature
90
85
VS=± 5V
RL=1k
80
75
70
-50 -10 30 70 110 150
Temperature (°C)
EL5410C Supply Current per Amplifier vs Supply
Voltage
2.9
2.7 TA=25°C
2.5
2.3
2.1
1.9
1.7
1.5
4 8 12 16 20
Supply Voltage (V)
Differential Gain and Phase
0.25
VS=±5V
0.15 AV=2
RL=1k
0.05
-0.05
0
100
0.20
0.10
0
-0.10
0
100
IRE
200
200
Slew Rate vs Temperature
33.85
33.80
33.75
33.70
33.65
33.60
33.55
-40
0 40 80
Temperature (°C)
VS=±5V
120 160
EL5410C Supply Current per Amplifier vs
Temperature
2.7
2.65 VS=±5V
2.6
2.55
2.5
2.45
2.4
-50
-10 30 70 110
Temperature (°C)
150
Harmonic Distortion vs VOP-P
-30
VS=±5V
-40 AV=1
RL=1k
FIN = 1MHz
-50
HD3
HD2
-60
-70
-80
02468
VOP-P (V)
10
6

6 Page









EL5210C pdf, datenblatt
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
stage of the device begin to conduct and overvoltage
damage could occur.
1V 10µ S
power supply voltage, plus the power in the IC due to the
loads, or:
PDMAX = Σi[VS × ISMAX + (VS+ VOUTi ) × ILOADi ]
when sourcing, and
PDMAX = Σi[VS × ISMAX + (VOUTi VS- ) × ILOADi ]
VS=±2.5V
TA=25° C
AV=1
VIN=6VP-P
1V
Figure 2. Operation with Beyond-the-Rails
Input
Power Dissipation
With the high-output drive capability of the EL5210C
and EL5410C amplifiers, it is possible to exceed the
125°C 'absolute-maximum junction temperature' under
certain load current conditions. Therefore, it is important
to calculate the maximum junction temperature for the
application to determine if load conditions need to be
modified for the amplifier to remain in the safe operating
area.
The maximum power dissipation allowed in a package is
determined according to:
PDMAX
=
T----J---M-----A----X---------T----A----M-----A----X--
ΘJA
when sinking.
Where:
i = 1 to 2 for Dual and 1 to 4 for Quad
VS = Total Supply Voltage
ISMAX = Maximum Supply Current Per Amplifier
VOUTi = Maximum Output Voltage of the
Application
ILOADi = Load current
If we set the two PDMAX equations equal to each other,
we can solve for RLOADi to avoid device overheat. Fig-
ure 3 and Figure 4 provide a convenient way to see if the
device will overheat. The maximum safe power dissipa-
tion can be found graphically, based on the package type
and the ambient temperature. By using the previous
equation, it is a simple matter to see if PDMAX exceeds
the device's power derating curves. To ensure proper
operation, it is important to observe the recommended
derating curves shown in Figure 3 and Figure 4.
Where:
TJMAX = Maximum Junction Temperature
TAMAX= Maximum Ambient Temperature
ΘJA = Thermal Resistance of the Package
PDMAX = Maximum Power Dissipation in the
Package.
The maximum power dissipation actually produced by
an IC is the total quiescent supply current times the total
12

12 Page





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