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PDF ECP200 Data sheet ( Hoja de datos )
| Número de pieza | ECP200 | |
| Descripción | 2.0 WATT POWER AMPLIFIER | |
| Fabricantes | EIC discrete Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ECP200 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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PRELIMINARY DATA SHEET
ECP200
2.0 WATT POWER AMPLIFIER
Product Features
1800 - 2300MHz
33 dBm P1dB
High Linearity: 49 dBm OIP3
High Efficiency: PAE > 50%
11 dB Linear Gain
Single 5V Supply
High Reliabilty
Class A or AB operation
Applications
Basestations and Repeaters
CDMA/GSM/TDMA/EDGE
PCS/CDMA2000/IMT2000/UMTS
Multi-carrier systems
Packages Available
QFN-16 (4x4mm)
SOIC-8
Product Description
The ECP200 is a single stage, 2.0W power amplifier that offers excellent linearity and efficiency. This device was
developed using EiC’s proprietary InGaP Heterojunction Bipolar Transistor (HBT) process. The devices have a 50
Ohms input impedance and pre-matched output. It is optimized for multicarriers applications and allows customers
to use class A or class AB operations. The devices can be easily matched in output side to obtain the optimum
power, linearity and efficiency. The product is targeted for use as driver amplifier for wireless infrastructure applications.
It is available in two surface-mount plastic packages: QFN-16 (4x4mm) and SOIC-8.
Electrical Specifications
Test Conditions: Ta = 25oC, VCC = +5 V Icq = 800 mA (class A operation)
SYMBOL
PARAMETER
F Frequency
G
P1dB
OIP3
Gain (Small Signal)
Output Power @ 1dB
Com pres s ion
Output Third Order Intercept
ACPR1 Pout = 24.5dBm (WCDMA)
f = 1960MHz
f = 2140MHz
f = 1960MHz
f = 2140MHz
f = 1960MHz
f = 2140MHz
f = 2140MHz
MIN.
1800
LIMITS
TYP.
11.0
10.5
33.0
33.0
49.0
48.0
-45
MAX.
2300
UNIT
MHz
dB
dBm
dBm
dBc
TEST CONDITION
Note 1
Note 2
Gain Flatness (120MHz Band) f = 2140MHz
±0.5
dB
RL in
Input Return Loss, 50 Ohm
f = 2000MHz
8.0
dB
RL out Output Return Loss, 50 Ohm f = 2000MHz
10.0
dB
Icop Operational Current @ P1dB
950 mA
Vde Device Voltage
5.0 Vdc
Note 1: OIP3 = Pout (by power meter, total 2-tone power) + (IM3(dB))/2) - 3dB
Note 2: ACPR measured for 3GPP test model 1, 64 DPCH. Channel Bandwidth = 3.84MHz. Frequency offset: +/- 5MHz.
CAUTION!
SENSITIVE ELECTRONIC DEVICE
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999
Fax: (510) 979-8902 www.eiccorp.com
Revision A
SS-000536-000
1
1 page  
PRELIMINARY DATA SHEET
ECP200
2.0 WATT POWER AMPLIFIER
Evaluation Board Bill of Material (4X4)
Location
(See eval
brd. Layout)
DESIG.
VALUE
DESCRIPTION
MANUFACTURER & P/N
22
C1, C2 100pF CAPACITOR, 0603 ROHM MCH185A101JK
NOTE1
11
C3 10.0uF CAPACITOR, 2512 PANASONIC ECS-H1CC106R NOTE1
33
C4, C7, C13 18pF CAPACITOR, 0603 ROHM MCH185A180JK
NOTE1
33
C5, C8, C14 1000pF CAPACITOR, 0603 ROHM MCH185C102KK
NOTE1
33
C9, C6, C15 1.0uF CAPACITOR, 0603 PANASONIC ECJ-1VF1A105Z NOTE1
--
1 INPUT 4|5
C16
3pF CAPACITOR, 0603 ROHM MCH185A020CK
NOTE1
1 -- INPUT 6 C16 2.7pF CAPACITOR, 0603 ROHM MCH185A2R7CK
NOTE1
-- 1 OUTPUT 2 C17 3.9pF CAPACITOR, 0603 ROHM MCH185A3R9CK
NOTE1
1
-- OUTPUT 1|2 C17
3.9pF CAPACITOR, 0603 ROHM MCH185A3R9CK
NOTE1
1 OUTPUT 4 C18 1.5pF CAPACITOR, 0603 ROHM MCH185A1R5CK
NOTE1
1 -- OUTPUT 5 C18 1.5pF CAPACITOR, 0603 ROHM MCH185A1R5CK
NOTE1
11
R1 0 Ω RESISTOR, 0603 ROHM MCR03EZHJ000
NOTE1
11
L1 15 nH INDUCTOR, 0805 CTLL 2012-15N
NOTE1
22
11
J2, J3
J1
--- SMA CONNECTOR EF JOHNSON 142-0701-881
--- RT ANG. CONN. SULLINS ELEC PZC04SGAN
NOTE1
11
--- IC, ECP200D (4X4) EiC Corp
11
--- PCB (4X4)
EiC Corp 60-000523-000B
Evaluation Board Layout
RFin
C1
J1
Vpd Gnd Vcc
C6
C5
R1 C4
C15
C14
C13
L1
C3
RFout
C2
J2 9 8 7 6 5 4 3 2 1 U1
123 6 7 8 9
45
J3
60-000523-000B
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999
Fax: (510) 979-8902 www.eiccorp.com
Revision A
SS-000536-000
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet ECP200.PDF ] | |
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