ECP103D Datasheet PDF - ETC
| Part Number | ECP103D | |
| Description | 1 Watt/ High Linearity InGaP HBT Amplifier | |
| Manufacturers | ETC | |
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ECP103
1 Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
Product Features
x 2300 - 2700 MHz
x +30.5 dBm P1dB
x +46 dBm Output IP3
x 10 dB Gain @ 2450 MHz
x 9 dB Gain @ 2600 MHz
x Single Positive Supply (+5V)
x Available in SOIC-8 or 16pin
4mm QFN package
Applications
x W-LAN
x RFID
x DMB
x Fixed Wireless
Product Description
The ECP103 is a high dynamic range driver amplifier in
a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve superior performance for various
narrowband-tuned application circuits with up to +46
dBm OIP3 and +30.5 dBm of compressed 1-dB power.
The part is housed in an industry standard SOIC-8 SMT
package. All devices are 100% RF and DC tested.
The ECP103 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP103 to maintain high linearity over temperature and
operate directly off a single +5V supply. This
combination makes the device an excellent candidate for
driver amplifier stages in wireless-LAN, digital
multimedia broadcast, or fixed wireless applications. The
device can also be used in next generation RFID readers.
Functional Diagram
Vref 1
N/C 2
RF IN 3
N/C 4
16 15 14
567
13
12 N/C
11 RF OUT
10 RF OUT
9 N/C
8
ECP103D
Vref 1
N/C 2
RF IN 3
N/C 4
8 Vbias
7 RF OUT
6 RF OUT
ECP103G
5 N/C
Specifications (1)
Parameter
Units
Operational Bandwidth
MHz
Test Frequency
MHz
Gain dB
Input Return Loss
dB
Output Return Loss
dB
Output P1dB
dBm
Output IP3 (2)
dBm
Noise Figure
dB
Test Frequency
MHz
Gain dB
Output P1dB
dBm
Output IP3 (2)
dBm
Operating Current Range , Icc (3) mA
Device Voltage, Vcc
V
Min
2300
400
Typ
2450
10
18
8
+30.5
+46
6.3
2600
9
+30
+45
450
5
Max
2700
500
1. Test conditions unless otherwise noted: T = 25ºC, Vsupply = +5 V in a tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1
is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
10.8 mA of current when used with a series bias resistor of R1=51 ¡ . (ie. total device current
typically will be 461 mA.)
Typical Performance (4)
Parameter
Frequency
S21 – Gain
S11
S22
Output P1dB
Output IP3
W-CDMA Channel Power
@ -45 dBc ACPR
Noise Figure
Supply Bias (3)
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
Typical
2450
2600
10 9
15 15
88
30.5 30.0
46 45
22.5
777
+5 V @ 450 mA
4. Typical parameters reflect performance in a tuned application circuit at +25 C.
¢
Absolute Maximum Rating
Ordering Information
Parameters
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Rating
-40 to +85 qC
-65 to +150 qC
+26 dBm
+8 V
900 mA
5W
Part No.
ECP103D
ECP103G
ECP103D-PCB2450
ECP103D-PCB2650
ECP103G-PCB2450
ECP103G-PCB2650
Description
1 Watt InGaP HBT Amplifier (16p 4mm Pkg)
1 Watt InGaP HBT Amplifier (Soic-8 Pkg)
2450 MHz Evaluation Board
2600 MHz Evaluation Board
2450 MHz Evaluation Board
2600 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com
October 2004 Rev 1
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ECP103
1 Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
ECP103D (16-pin 4x4mm Package) Mechanical Information
Outline Drawing
Product Marking
The component will be marked with an
“ ECP103D” designator with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “ Application
Notes” section.
0.65mm
TYP.
Land Pattern
0.25mm DIA. THERMAL GROUND VIA HOLE VIAS ARE PLACED
ON A 0.65mm GRID. VIAS ARE TO BE CONNECTED TO TOP,
BOTTOM, AND INTERNAL GROUND PLANES IN ORDER TO
MAXIMIZE HEAT DISSIPATION. FOR .031" THK FR4 MATERIAL,
VIA BARREL PLATING TO BE MIN. 0.0014 THICK. VIAS TO BE
PLUGGED WITH EITHER CONDUCTIVE OR NON-CONDUCTIVE
EPOXY TO PREVENT SOLDER. DRAINS THROUGH VIA IN
REFLOW PROCESS
GROUND PLANE AREA FOR VIAS
2.23mm X 2.23mm
DEVICE GROUND PAD
2.0mm X 2.0mm
RECOMMENDED PAD
0.76mm X 0.34mm
4.00mmTYP.
SOLDERMASK SWELL TO BE 0.5mm
FROM OUTSIDE EDGE OF ALL PADS
16L 4.0mm X 4.0mm PACKAGE
Thermal Specifications
Parameter
Rating
Operating Case Temperature
-40 to +85q C
Thermal Resistance, Rth (1)
33q C / W
Junction Temperature, Tjc (2)
159q C
Notes:
1. The thermal resistance is referenced from the junction-
to-case at a case temperature of 85§ C. Tjc is a function
of the voltage at pins 10 and 11 and the current applied
to pins 10, 11, and 16 and can be calculated by:
Tjc = Tcase + Rth * Vcc * Icc
2. This corresponds to the typical biasing condition of +5V,
450 mA at an 85§ C case temperature. A minimum
MTTF of 1 million hours is achieved for junction
temperatures below 247§ C.
MTTF vs. GND Tab Temperature
1000000
100000
10000
1000
100
50
60 70 80 90
Tab temperature (°C)
100
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes between 500 and 1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +235§ C convection reflow
Standard: JEDEC Standard J-STD-020
Functional Diagram
Vref 1
N/C 2
RF IN 3
N/C 4
16 15 14
567
13
12 N/C
11 RF OUT
10 RF OUT
9 N/C
8
Function
Vref
RF Input
RF Output
Vbias
GND
N/C or GND
Pin No.
1
3
10, 11
16
Backside Padd
2, 4-9, 12-15
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted
device is strictly required for proper thermal operation.
Damage to the device can occur without the use of one.
2. Ground / thermal vias are critical for the proper performance
of this device. Vias should use a .35mm (#80 / .0135” )
diameter drill and have a final plated thru diameter of .25
mm (.010” ).
3. Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
4. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
5. Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
6. RF trace width depends upon the PC board material and
construction.
7. Use 1 oz. Copper minimum.
8 All dimensions are in millimeters (inches). Angles are in
degrees.
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com
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October 2004 Rev 1
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