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E28F016SA-070 Schematic ( PDF Datasheet ) - Intel Corporation

Teilenummer E28F016SA-070
Beschreibung 28F016SA 16-MBIT (1 MBIT X 16/ 2 MBIT X 8)FlashFile MEMORY
Hersteller Intel Corporation
Logo Intel Corporation Logo 




Gesamt 55 Seiten
E28F016SA-070 Datasheet, Funktion
E
28F016SA 16-MBIT
(1 MBIT X 16, 2 MBIT X 8)
FlashFile™ MEMORY
Includes Commercial and Extended Temperature Specifications
n User-Selectable 3.3V or 5V VCC
n User-Configurable x8 or x16 Operation
n 70 ns Maximum Access Time
n 28.6 MB/sec Burst Write Transfer Rate
n 1 Million Typical Erase Cycles per
Block
n 56-Lead, 1.2 mm x 14 mm x 20 mm
TSOP Package
n 56-Lead, 1.8 mm x 16 mm x 23.7 mm
SSOP Package
n Revolutionary Architecture
Pipelined Command Execution
Program during Erase
Command Superset of Intel
28F008SA
n 1 mA Typical ICC in Static Mode
n 1 µA Typical Deep Power-Down
n 32 Independently Lockable Blocks
n State-of-the-Art 0.6 µm ETOX™ IV Flash
Technology
Intel’s 28F016SA 16-Mbit FlashFile™ memory is a revolutionary architecture which is the ideal choice for
designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative
capabilities, low-power, extended temperature operation and high read/program performance, the 28F016SA
enables the design of truly mobile, high-performance communications and computing products.
The 28F016SA is the highest density, highest performance nonvolatile read/program solution for solid-state
storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F008SA 8-Mbit
FlashFile memory), extended cycling, extended temperature operation, flexible VCC, fast program and read
performance and selective block locking provide highly flexible memory components suitable for Resident
Flash Arrays, high-density memory cards and PCMCIA-ATA flash drives. The 28F016SA dual read voltage
enables the design of memory cards which can be interchangeably read/written in 3.3V and 5.0V systems. Its
x8/x16 architecture allows optimization of the memory-to-processor interface. Its high read performance and
flexible block locking enable both storage and execution of operating systems and application software.
Manufactured on Intel’s 0.6 µm ETOX IV process technology, the 28F016SA is the most cost-effective,
highest density monolithic 3.3V FlashFile memory.
November 1996
Order Number: 290489-004






E28F016SA-070 Datasheet, Funktion
28F016SA
E
when writing several bytes in a row to the array or
erasing several blocks at the same time. The
28F016SA can also perform program operations to
one block of memory while performing erase of
another block.
The 28F016SA provides user-selectable block
locking to protect code or data such as device
drivers, PCMCIA card information, ROM-executable
O/S or application code. Each block has an
associated nonvolatile lock-bit which determines the
lock status of the block. In addition, the 28F016SA
has a master Write Protect pin (WP#) which
prevents any modifications to memory blocks
whose lock-bits are set.
The 28F016SA contains three types of Status
Registers to accomplish various functions:
A Compatible Status Register (CSR) which is
100% compatible with the 28F008SA FlashFile
memory’s Status Register. This register, when
used alone, provides a straightforward upgrade
capability to the 28F016SA from a 28F008SA-
based design.
A Global Status Register (GSR) which informs
the system of Command Queue status, Page
Buffer status, and overall Write State Machine
(WSM) status.
32 Block Status Registers (BSRs) which provide
block-specific status information such as the
block lock-bit status.
The GSR and BSR memory maps for byte-wide and
word-wide modes are shown in Figures 5
and 6.
The 28F016SA incorporates an open drain RY/BY#
output pin. This feature allows the user to OR-tie
many RY/BY# pins together in a multiple memory
configuration such as a Resident Flash Array.
Other configurations of the RY/BY# pin are enabled
via special CUI commands and are described in
detail in the 16-Mbit Flash Product Family User’s
Manual.
The 28F016SA also incorporates a dual chip-enable
function with two input pins, CE0# and CE1#. These
pins have exactly the same functionality as the
regular chip-enable pin CE# on the 28F008SA. For
minimum chip designs, CE1# may be tied to ground
to use CE0# as the chip enable input. The
28F016SA uses the logical combination of these
6
two signals to enable or disable the entire chip. Both
CE0# and CE1# must be active low to enable the
device and, if either one becomes inactive, the chip
will be disabled. This feature, along with the open
drain RY/BY# pin, allows the system designer to
reduce the number of control pins used in a large
array of 16-Mbit devices.
The BYTE# pin allows either x8 or x16
read/programs to the 28F016SA. BYTE# at logic
low selects 8-bit mode with address A0 selecting
between low byte and high byte. On the other hand,
BYTE# at logic high enables 16-bit operation with
address A1 becoming the lowest order address and
address A0 is not used (don’t care). A device block
diagram is shown in Figure 1.
The 28F016SA is specified for a maximum access
time of 70 ns (tACC) at 5.0V operation (4.75V to
5.25V) over the commercial temperature range
(0°C to +70°C). A corresponding maximum access
time of 120 ns at 3.3V (3.0V to 3.6V and 0°C to
+70°C) is achieved for reduced power consumption
applications.
The 28F016SA incorporates an Automatic Power
Saving (APS) feature which substantially reduces
the active current when the device is in the static
mode of operation (addresses not switching).
In APS mode, the typical ICC current is 1 mA at 5.0V
(0.8 mA at 3.3V).
A deep power-down mode of operation is invoked
when the RP# (called PWD# on the 28F008SA) pin
transitions low. This mode brings the device power
consumption to less than 1.0 µA, typically, and
provides additional write protection by acting as a
device reset pin during power transitions. A reset
time is required from RP# switching high until
outputs are again valid. In the deep power-down
state, the WSM is reset (any current operation will
abort) and the CSR, GSR and BSR registers are
cleared.
A CMOS standby mode of operation is enabled
when either CE0# or CE1# transitions high and RP#
stays high with all input control pins at CMOS
levels. In this mode, the device typically draws an
ICC standby current of 50 µA.
2.0 DEVICE PINOUT
The 28F016SA 56-lead TSOP Type I pinout
configuration is shown in Figure 2. The 56-lead
SSOP pinout configuration is shown in Figure 3.

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E28F016SA-070 pdf, datenblatt
28F016SA
3.0 MEMORY MAPS
A[20-0]
1FFFFF
1F0000
1EFFFF
1E0000
1DFFFF
1D0000
1CFFFF
1C0000
1BFFFF
1B0000
1AFFFF
1A0000
19FFFF
190000
18FFFF
180000
17FFFF
170000
16FFFF
160000
15FFFF
150000
14FFFF
140000
13FFFF
130000
12FFFF
120000
11FFFF
110000
10FFFF
100000
0FFFFF
0F0000
0EFFFF
0E0000
0DFFFF
0D0000
0CFFFF
0C0000
0BFFFF
0B0000
0AFFFF
0A0000
09FFFF
090000
08FFFF
080000
07FFFF
070000
06FFFF
060000
05FFFF
050000
04FFFF
040000
03FFFF
030000
02FFFF
020000
01FFFF
010000
00FFFF
000000
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
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1
0
Figure 4. 28F016SA Memory Map (Byte-Wide Mode)
12
E
0489_03

12 Page





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