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PDF EMIF02-600FU7 Data sheet ( Hoja de datos )
| Número de pieza | EMIF02-600FU7 | |
| Descripción | 10-BIT WIDE EMI FILTER INCUDINGESD PROTECTION | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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®
Application Specific Discretes
A.S.D.TM
EMIF02-600FU7
10-BIT WIDE EMI FILTER
INCUDING ESD PROTECTION
MAIN APPLICATIONS
Where EMI filtering in ESD sensitive equipment is required :
Computers and printers
Communication systems
Mobile phones
MCU Boards
DESCRIPTION
The EMIF02-600FU7 is a highly integrated array designed
to suppress EMI / RFI noise in all systems subjected to
electromagnetic interferences.
Additionally, this filter includes an ESD protection circuitry
which prevents the protected device from destruction when
subjected to ESD surges up to 15 kV. The
EMIF02-600FU7 provides best efficiency when using
separated inputs and outputs, in the so-called 4-points
structure.
BENEFITS
10-bit EMI bi-directional low-pass-filter
Enhanced ESD protection for the protected device, op-
timized by the four point structure
High flexibility in the design of high density boards
COMPLIESWITHTHE FOLLOWING STANDARDS :
IEC 1000-4-2
15kV (air discharge)
8 kV (contact discharge)
ESDresponseto IEC1000-4-2 (15 kVairdischarge)
SSOP24
FUNCTIONAL DIAGRAM
.
.
.
10
C
E
L
L
S
.
.
.
Filtering response (with 50Ω line)
TM : ASD is trademark of STMicroelectronics.
September 1998 - Ed: 2A
1/9
1 page  
EMIF02-600FU7
Fig A5 : Remaining voltage at both stages S1 (Vin) and S2 (Vout) during ESD surge
a) Positive surge
b) Negative surge
Please note that the EMIF02-600FU7 is not only acting for positive ESD surges but also for negative ones. For these kind
of disturbances it clamps close to ground voltage as shown in Fig. A5b.
NOTE: DYNAMIC RESISTANCE MEASUREMENT
As the value of the dynamic resistance remains stable for a
surge duration lower than 20µs, the 2.5µs rectangular surge
is well adapted. In addition both rise and fall times are
optimized to avoid any parasitic phenomenon during the
measurement of Rd.
Fig A6 : Rd measurement current wave
I
IPP
2 µs
2.5 µs
2.5µs duration measurement wave
t
CROSSTALK BEHAVIOR
1- Crosstalk phenomena
Fig A7 : Crosstalk phenomena
RG1
line 1
VG1
RG2
line 2
RL1 α VG1 β VG2
VG2 RL2 α VG2 β VG1
DRIVERS
RECEIVERS
The crosstalk phenomena are due to the coupling between 2 lines. The coupling factor ( β12 or β21 ) increases when the
gap across lines decreases, particularly in silicon dice. In the example above the expected signal on load RL2 is α2VG2, in
fact the real voltage at this point has got an extra value β21VG1. This part of the VG1 signal represents the effect of the
crosstalk phenomenon of the line 1 on the line 2. This phenomenon has to be taken into account when the drivers impose
fast digital data or high frequency analog signals in the disturbing line. The perturbed line will be more affected if it works
with low voltage signal or high load impedance (few kΩ). The following chapters give the value of both digital and analog
crosstalk.
5/9
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| PDF Descargar | [ Datasheet EMIF02-600FU7.PDF ] | |
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