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Teilenummer | 3SK298 |
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Beschreibung | Silicon N-Channel Dual Gate MOS FET | |
Hersteller | Hitachi Semiconductor | |
Logo | ||
Gesamt 11 Seiten 3SK298
Silicon N-Channel Dual Gate MOS FET
Application
UHF / VHF RF amplifier
Features
• Low noise figure.
NF = 1.0 dB typ. at f = 200 MHz
• Capable of low voltage operation
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-390
1st. Edition
3SK298
Noise Figure vs. Drain to Source Voltage
2.0
1.6
1.2
0.8
0.4 VG2S = 3 V
I D = 10 mA
f = 200 MHz
0 2 4 6 8 10
Drain to source voltage VDS (V)
Noise Figure vs. Drain Current
10
VDS = 6 V
VG2S = 3 V
8 f = 900 MHz
6
4
2
0
12
5 10 20
Drain current I D (mA)
Power Gain vs. Drain Current
20
16
12
8
4
0
12
VDS = 6 V
VG2S = 3 V
f = 900 MHz
5 10 20
Drain current I D (mA)
Power Gain vs. Drain to Source Voltage
20
16
12
8
4 VG2S = 3 V
I D = 10 mA
f = 900 MHz
0 2 4 6 8 10
Drain to source voltage VDS (V)
6
6 Page | ||
Seiten | Gesamt 11 Seiten | |
PDF Download | [ 3SK298 Schematic.PDF ] |
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