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PDF 3SK255 Data sheet ( Hoja de datos )
| Número de pieza | 3SK255 | |
| Descripción | RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK255
RF AMPLIFIER FOR UHF TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS SUPER MINI MOLD
FEATURES
• Low VDD Use
: (VDS = 3.5 V)
• Driving Battery
• Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz)
• High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz)
• Suitable for uses as RF amplifier in UHF TV tuner.
• Automatically Mounting : Embossed Type Taping
• Small Package
: 4 Pins Super Mini Mold
PACKAGE DIMENSIONS
(Unit: mm)
2.1±0.2
1.25±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
VDSX
VG1S
VG2S
18
±8*1
±8*1
V
V
V
Gate1 to Drain Voltage
VG1D
18
V
Gate2 to Drain Voltage
VG2D
18
V
Drain Current
ID 25 mA
Total Power Dissipation
PD
130 mW
Channel Temperature
Tch 125 °C
Storage Temperature
Tstg –55 to +125 °C
*1: RL ≥ 10 kΩ
*2: Free air
PIN CONNECTIONS
1. Source
2. Drain
3. Gate2
4. Gate1
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
Document No. P10586EJ3V0DS00 (3rd edition)
Date Published June 1996 P
Printed in Japan
© 1993
1 page  
GPS AND NF TEST CIRCUIT AT f = 900 MHz
VG2S
1 000 pF
47 kΩ
1 000 pF
INPUT
50 Ω
to 10 pF
to 10 pF
L1
47 kΩ
to 10 pF
L2
to 10 pF
OUTPUT
50 Ω
RFC
3SK255
1 000 pF
VG1S
1 000 pF
VDD
L1, L2; 35 × 5 × 0.2 mm
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 3SK255.PDF ] | |
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| 3SK255 | RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD | NEC |
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